High Frequency/High Speed Characterization of Optoelectronic Integrated Circuits

9412920 Prasad该项目的目标是启动光电集成电路（OEIC）中光学元件的高速电气特性。 这之后是完整OEIC的表征。 一个现有的自动网络分析仪和晶圆上的探针台与测量能力高达40 GHz的频率是适当的修改与光电探测器和辅助光学设备，以允许光学以及电气RF测量。 激光二极管，发光二极管和检测器模型将提取使用散射参数测量和微波调制响应的设备将被测量，以优化调制带宽。 将研究光电电路和系统，特别注意当a）输入和输出都是电的，B）输入和输出都是光的，c）输入是电的而输出是光的，以及d）输入是光的而输出是电的时的性能之间的关键比较。 这部分的研究将开始与测量的光电收发器与LED光源以及激光器，M-S-M探测器和GaAs MESFET VLSI电子。 在这个初始阶段开发的测量和表征方法将足够通用，因此它们也可以应用于其他光电子电路和系统。 ***

9412920 Prasad The goal of this project is to initiate high speed electrical characterization of optical components in optoelectronic integrated circuits (OEIC's). This is to be followed by the characterization of full OEIC's. An existing automatic network analyzer and on-wafer probe station with measurement capability up to a frequency of 40 GHz is to be suitably modified with a photodector and auxiliary optical equipment to allow optical as well as electrical RF measurements. Laser diode, light emitting diode and detector models will be extracted using scattering parameter measurements and the microwave modulation response of the devices will be measured with a view to optimization of the modulation bandwidth. Optoelectronic circuits and systems will be investigated with particular attention being given to a critical comparison between the performance when a) both input and output are electrical, b) both input and output are optical, c) the input is electrical and the output is optical, and d) the input is optical and the output is electrical. This part of the research will be initiated with measurements of an optoelectronic transceiver with LED sources as well as with lasers, M-S-M detectors and GaAs MESFET VLSI electronics. The measurement and characterization methods developed in this initial phase will be sufficiently general so that they can also be applied to other optoelectronics circuits and systems. ***