Parameter Extraction from High Frequency Heterojunction Bipolar Transistor Characteristics

从高频异质结双极晶体管特性中提取参数

• 批准号: 9005837
• 负责人: Sheila Prasad
• 金额: --
• 依托单位: Northeastern University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-01 至 1993-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9005837&HistoricalAwards=false
• 关键词: Parameter; Extraction; Frequency; Heterojunction; Bipolar

This research uses the measured scattering parameters of GaAs and In (GaA1) As heterojunction transistors (emitter-up and emitter-down) to obtain an optimized model of the device. The method of modelling is based on the simulated annealing algorithm which avoids the problem of entrapment in local minima encountered in conventional methods of modelling. The resultant model is expected to lead devices that offer superior microwave performance.

本研究利用测量的 GaAs 和 In (GaA1) As 异质结晶体管（发射极向上和发射极向下）的散射参数来获得器件的优化模型。 该建模方法基于模拟退火算法，避免了传统建模方法中遇到的陷入局部极小值的问题。 由此产生的模型有望成为提供卓越微波性能的领先设备。