State-Resolved Dynamics in Atomic-Layer Epitaxy (ALE) and Laser-ALE of III-V Compound Semiconductors

III-V 化合物半导体原子层外延 (ALE) 和激光 ALE 中的状态分辨动力学

• 批准号: 9415337
• 负责人: Xiaoyang Zhu
• 金额: $ 18万
• 依托单位: Southern Illinois University at Carbondale
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-02-01 至 1998-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9415337&HistoricalAwards=false
• 关键词: State; Resolved; Dynamics; Atomic; Layer

In this project funded by the Advanced Materials Processing Program of the Chemistry Division and the Electronic Materials Program of the Division of Materials Research, Xiaoyang Zhu of Southern Illinois University will study the fundamental reaction dynamics underlying thermal- and laser-assisted/induced atomic-layer epitaxial (ALE) growth of III-V semiconductors, predominantly gallium arsenide (GaAs). Quantum-state resolved distributions of nascent gas-phase products (methyl radicals and molecular hydrogen) formed in situ during laser-ALE growth of GaAs. Experimental techniques include resonance-enhanced multiphoton ionization (REMPI) spectroscopy and time-of-flight mass spectroscopy (TOFMS). The energetic information carried by gas-phase species should help answer such important questions as the molecular basis for the macroscopic kinetics observed in ALE, the effect on growth kinetics of the evolving surface structure, the coupling and redistribution of photon energy, and other ALE pathways involving Ga- and As-containing gas-phase products. The proposed research will also be extended to ALE growth of other III-V compounds. %%% Gallium arsenide (GaAs) based semiconductors play a vital role in the development of the next generation of optoelectronic and digital instruments because of some of their attractive properties, such as high speed, (for example, for computational purposes) and desirable active wavelength (in the case of communications devices). However, the manufacture of GaAs-based semiconductors has been hindered in part by effective methods for forming the electronic devices. This project addresses some of the stumbling blocks in one of the most promising methods of depositing GaAs in order to find resolve some of the problems.

在这个由化学部先进材料加工计划和材料研究部电子材料计划资助的项目中，南伊利诺伊大学的朱晓阳将研究III-V半导体（主要是砷化镓（GaAs））的热辅助和激光辅助/诱导原子层外延（ALE）生长的基本反应动力学。激光- ale生长GaAs过程中原位形成的新生气相产物（甲基自由基和分子氢）的量子态解析分布。实验技术包括共振增强多光子电离（REMPI）光谱和飞行时间质谱（TOFMS）。气相物质携带的能量信息将有助于回答一些重要的问题，如在ALE中观察到的宏观动力学的分子基础，不断变化的表面结构对生长动力学的影响，光子能量的耦合和再分配，以及其他涉及含Ga和as气相产物的ALE途径。拟议的研究也将扩展到其他III-V化合物的ALE生长。基于砷化镓（GaAs）的半导体在下一代光电和数字仪器的发展中起着至关重要的作用，因为它们具有一些吸引人的特性，例如高速（例如，用于计算目的）和理想的有源波长（在通信设备的情况下）。然而，gaas基半导体的制造在一定程度上受到了形成电子器件的有效方法的阻碍。该项目解决了最有前途的沉积砷化镓方法之一的一些绊脚石，以便找到解决一些问题的方法。