New Materials and Processing Methods for Fabrication of Mid- and Far-Infrared Tunable Diode Lasers

9416871 McCann将进行与制造新型IV-VI族半导体激光器结构的化学和物理方面有关的基础加工研究，该结构由与BaF 2二极管激光器晶格匹配的Pb（1-x）EuxSe（1-y）Tey和Pb（1-x）SnxSe（1-y）Tey层组成。 程序将被研究，其中涉及从衬底上去除外延生长的窄带隙IV-VI半导体激光器结构，然后将激光器结构夹在两个导热散热器之间。 IV-VI族半导体激光器结构将使用分子束外延（MBE）和液相外延（LPE）生长。该计划的主要目标是发展对IV-VI半导体激光材料先进加工的基本理解。 该计划的一个重要特点是在材料研究的基础和技术重要领域对学生进行培训。 这项研究将有助于提高用于监测大气成分的先进光子器件的一般性能。 ***

9416871 McCann Fundamental processing research related to the chemistry and physics aspects of fabrication of novel IV-VI semiconductor laser structures composed of Pb(1-x)EuxSe(l-y)Tey and Pb(1-x)SnxSe(l-y)Tey layers lattice matched with BaF2 diode lasers will be carried out. Procedures will be studied which involve removing an epitaxially-grown narrow bandgap IV-VI semiconductor laser structure from the substrate and then sandwiching the laser structure between two thermally conductive heat sinks. IV-VI semiconductor laser structures will be grown using both molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE). %%% The primary goal of this program is to develop a fundamental understanding of advanced processing of IV-VI semiconductor laser materials. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. This research will contribute to improving the general performance of advanced photonic devices used in monitoring atmospheric constituents. ***