New Materials and Processing Methods for Fabrication of Mid- and Far-Infrared Tunable Diode Lasers

9416871 McCann将进行与BaF2二极管激光器匹配的Pb(1-x)EuxSe(l-y)Tey和Pb(1-x)SnxSe(l-y)Tey层晶格组成的新型IV-VI半导体激光器结构的化学和物理基础加工研究。研究过程包括从衬底上移除外延生长的窄带隙IV-VI半导体激光器结构，然后将激光结构夹在两个导热散热器之间。利用分子束外延（MBE）和液相外延（LPE）制备IV-VI半导体激光器结构。该计划的主要目标是发展对IV-VI半导体激光材料先进加工的基本理解。该计划的一个重要特点是培养学生在材料研究的一个基本的和技术上重要的领域。该研究将有助于提高用于大气成分监测的先进光子器件的总体性能。＊＊＊

9416871 McCann Fundamental processing research related to the chemistry and physics aspects of fabrication of novel IV-VI semiconductor laser structures composed of Pb(1-x)EuxSe(l-y)Tey and Pb(1-x)SnxSe(l-y)Tey layers lattice matched with BaF2 diode lasers will be carried out. Procedures will be studied which involve removing an epitaxially-grown narrow bandgap IV-VI semiconductor laser structure from the substrate and then sandwiching the laser structure between two thermally conductive heat sinks. IV-VI semiconductor laser structures will be grown using both molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE). %%% The primary goal of this program is to develop a fundamental understanding of advanced processing of IV-VI semiconductor laser materials. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. This research will contribute to improving the general performance of advanced photonic devices used in monitoring atmospheric constituents. ***