NSF-CGP Science Fellowship Program: Effects of Cu Concentration and Line Width on Electromigration-Induced Submicron Al Interconnects

NSF-CGP 科学奖学金计划：铜浓度和线宽对电迁移引起的亚微米铝互连的影响

• 批准号: 9418769
• 负责人: David Grosjean
• 金额: $ 9.25万
• 依托单位: Individual Award
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-03-15 至 1998-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9418769&HistoricalAwards=false
• 关键词: NSF; CGP; Science; Fellowship; Program

9418769 Grosjean This proposal supports a two-year postdoctoral fellowship for Dr. David Grosjean at NEC Corporation at Tsukuba and at the Research Center for Utra-High Voltage Electron Microscopy at Osaka University. Project funding will enable Dr. Grosjean to spend two years in Japan, resident at NEC, in order to conduct research on microelectronics with Dr. Hidekazu Okabayashi and other Japanese electrical engineers. The PI has proposed to work on the very challenging and technologically important problem of the electromigration of aluminum atoms at high electric current density in submicron aluminum lines. He will also gain knowledge of metal film preparation and electrical characterization and stressing equipment. As a postdoctoral fellow, Dr. Grosjean will have the opportunity to become familiar with research techniques and equipment at NEC Corporation and Osaka University. Therefore, this proposal fulfills the objectives of the Program in its exchange and transfer of scientific knowledge through an international collaboration. ***

小行星9418769 该提案支持大卫格罗斯让博士在筑波NEC公司和大坂大学超高压电子显微镜研究中心进行为期两年的博士后研究。 项目资金将使Grosjean博士能够在日本NEC工作两年，与Hidekazu Okabayashi博士和其他日本电气工程师一起进行微电子研究。 PI提出了在亚微米铝线路中在高电流密度下铝原子的电迁移这一非常具有挑战性和技术重要性的问题。 他还将获得金属薄膜制备和电气特性和应力设备的知识。 作为博士后研究员，Grosjean博士将有机会熟悉NEC公司和大坂大学的研究技术和设备。 因此，该提案实现了该计划通过国际合作交流和转让科学知识的目标。 ***