A New Approach for Testing and Modeling Silicon Dioxide Reliability

9420585罗森鲍姆将调查三个问题，这些问题的答案将为未来有关二氧化硅主题的工作提供一个实际的重点。首先，物理实验将被用来研究非常薄的氧化物的可靠性，并发现目前理解中的不足。其次，通过对实验数据的分析和对工业可靠性工程师的广泛讨论，对现有的氧化物可靠性模型进行评估，并指出那些被认为不够充分的模型。最后，将确定氧化物可靠性的哪些方面将在实践中限制未来集成电路的可靠性。将考虑各种电路类型，例如逻辑电路、非易失性存储器和DRAM，因为不同的电路可能受到不同的氧化物可靠性问题的限制。这项工作的最终目标是将氧化物可靠性模型纳入可靠性设计CAD工具；然而，活动的重点是可靠性物理和建模，而不是算法开发。由于开发一种有用的设计工具是这项研究的动力，因此将在赠款期间作出重大努力，与这类工具的预期用户，即工业可靠性和设计工程师进行互动。***

9420585 Rosenbaum Three questions will be investigated and the answers will provide a practical focus for future work on the subject of silicon dioxide. First, physical experimentation will be used to study reliability of very thin oxides and to discover deficiencies in the current understanding. Second, through analysis of experimental data and extensive discussions will reliability engineers from industry, present models for oxide reliability will be evaluated and note will be made of those which are considered inadequate. Finally, a determination will be made as to which aspects of oxide reliability will, in practice, limit the reliability o future integrated circuits. A variety of circuit types will be considered, such as, logic circuits, non-volatile memories, and DRAM, as different circuits may be limited by different oxide reliability problems. The final goal of this work is incorporation of models for oxide reliability in a design-for-reliability CAD tool; however, the focus of the activities on reliability physics and modeling rather than on algorithm development. Since development of a useful design tool provides the motivation for this research, significant effort will be made during the grant period to interact with the intended users of such tools, namely, industrial reliability and design engineers. ***