Spin-polarized Electron Tunneling with Ferromagnetic Materials

9423013模型利用表面敏感的自旋极化隧穿技术对磁性材料的性质进行实验研究是本研究计划的目的。特别是，将研究铁磁金属之间的电子隧穿，通过铁磁绝缘体的电子隧穿，以及超薄膜中的交换效应，以及在铁磁金属和顺磁金属之间的界面上的交换效应。平面隧道结将在低温和电压下使用超导体作为电子自旋探测器。我们最近成功地在室温和更高的电压下使用铁磁性金属作为电子自旋探测器，极大地拓宽了这一研究领域，并提出了技术用途。改进计算机磁存储系统目前是当务之急。从目前和未来的技术角度来看，表面和界面的研究已经变得越来越有意义。这是一个利用自旋极化隧穿技术研究薄膜表面和三层膜中磁效应的物理的建议。最近在室温下发现的铁磁隧道结的大磁阻效应有望在读/写传感器和存储元件中得到重要的应用。***

9423013 Moodera Experimental investigation of the properties of magnetic materials by the surface-sensitive technique of spin-polarized tunneling is the aim of this research program. In particular, electron tunneling between ferromagnetic metals, through ferromagnetic insulators, and exchange effects in ultrathin films, and at the interfaces between ferromagnetic metals and paramagnetic metals will be studied. Planar tunnel junctions will use superconductors as electron-spin detectors at low temperature and voltage. Our recent success in using ferromagnetic metals as electron-spin detectors at room temperature and higher voltages greatly broadens this field of research and suggests technological uses. %%% Improvement of computer magnetic memory systems is currently of high priority. Study of surfaces and interfaces has become increasingly pertinent from the point of present and future technology. This is a proposal for the study of the physics of magnetic effects in thin film surfaces and trilayers using the technique of spin-polarized tunneling. The recently discovered large magnetoresistance effects in ferro-magnetic tunnel junctions at room temperature promise important applications for these effects in READ/WRITE sensors and memory elements. ***