Spin-polarized Electron Tunneling with Ferromagnetic Materials

利用自旋极化隧穿的表面敏感技术对磁性材料的特性进行实验研究是本研究项目的目的。特别是，铁磁金属之间的电子隧穿，通过铁磁绝缘体，超薄膜中的交换效应，以及铁磁金属和顺磁金属之间的界面将被研究。平面隧道结将使用超导体作为低温和低温电压下的电子自旋探测器。我们最近成功地在室温和高电压下使用铁磁性金属作为电子自旋探测器，极大地拓宽了这一研究领域，并提出了技术用途。计算机磁存储系统的改进是目前的当务之急。从现在和未来的技术角度来看，表面和界面的研究变得越来越相关。本文提出了一种利用自旋极化隧道技术研究薄膜表面和三层薄膜中磁效应的物理方法。最近在室温下铁磁隧道结中发现的大磁阻效应为这些效应在读/写传感器和存储元件中的重要应用提供了前景。* * *

9423013 Moodera Experimental investigation of the properties of magnetic materials by the surface-sensitive technique of spin-polarized tunneling is the aim of this research program. In particular, electron tunneling between ferromagnetic metals, through ferromagnetic insulators, and exchange effects in ultrathin films, and at the interfaces between ferromagnetic metals and paramagnetic metals will be studied. Planar tunnel junctions will use superconductors as electron-spin detectors at low temperature and voltage. Our recent success in using ferromagnetic metals as electron-spin detectors at room temperature and higher voltages greatly broadens this field of research and suggests technological uses. %%% Improvement of computer magnetic memory systems is currently of high priority. Study of surfaces and interfaces has become increasingly pertinent from the point of present and future technology. This is a proposal for the study of the physics of magnetic effects in thin film surfaces and trilayers using the technique of spin-polarized tunneling. The recently discovered large magnetoresistance effects in ferro-magnetic tunnel junctions at room temperature promise important applications for these effects in READ/WRITE sensors and memory elements. ***