Fundamental Ultrashort Laser Studies of Electron Dynamics atSemiconductor Surfaces: Photoemission and Chemistry

9424252奥斯古德哥伦比亚大学教员理查德·奥斯古德教授与目前由托尼·海因茨领导的IBM-T·J·沃森实验室的一个研究小组将进行合作研究。合作将集中在超短脉冲(即飞秒和皮秒)激光测量半导体表面和界面上的电子动力学。拟议的工作将允许研究在单晶半导体表面或其附近测量电子动力学所需的超短脉冲技术的使用。合作将从T.J.沃森实验室从1995年3月开始为期三个月的访问开始，并将使用那里的大量实验设备(这些设备是独一无二的，因此哥伦比亚大学没有)进行超短激光测量。该联合计划将允许IBM科学家广泛和持续地参与几名哥伦比亚大学博士生的论文教育。最初的实验将包括对GaAs/Ge系统的测量，随后的工作将集中在对Si/SiGe界面的研究上。***

9424252 Osgood A cooperative research involving the collaboration of Professor Richard Osgood, a faculty member at Columbia University with a research group at IBM - T. J. Watson Laboratory, currently directed by Tony Heinz will be conducted. The collaboration will focus on ultrashort-pulse (i.e. femtosecond and picosecond) laser measurements of electron-dynamics at semiconductor surfaces and interfaces. The proposed work will allow a study of the use of ultrashort pulse techniques required for the measurements of electron dynamics at or near single-crystal semiconductor surfaces. The collaboration will begin with a three-month visit of T.J. Watson Laboratory starting in March 1995, and will use the extensive experimental facilities there (which are unique and therefore not available at Columbia University) for ultrashort laser measurements. The joint program will allow IBM scientists to be involved extensively and continuously in the thesis education of several Columbia Ph.D students. Initial experiments will involve measurements of GaAs/Ge system, with subsequent work focusing on a study of Si/SiGe interfaces. ***