Fundamental Ultrashort Laser Studies of Electron Dynamics atSemiconductor Surfaces: Photoemission and Chemistry

半导体表面电子动力学的基础超短激光研究：光电发射和化学

• 批准号: 9424252
• 负责人: Richard Osgood
• 金额: $ 22.5万
• 依托单位: Columbia University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-04-15 至 1998-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9424252&HistoricalAwards=false
• 关键词: Fundamental; Ultrashort; Laser; Studies; Electron

9424252 Osgood A cooperative research involving the collaboration of Professor Richard Osgood, a faculty member at Columbia University with a research group at IBM - T. J. Watson Laboratory, currently directed by Tony Heinz will be conducted. The collaboration will focus on ultrashort-pulse (i.e. femtosecond and picosecond) laser measurements of electron-dynamics at semiconductor surfaces and interfaces. The proposed work will allow a study of the use of ultrashort pulse techniques required for the measurements of electron dynamics at or near single-crystal semiconductor surfaces. The collaboration will begin with a three-month visit of T.J. Watson Laboratory starting in March 1995, and will use the extensive experimental facilities there (which are unique and therefore not available at Columbia University) for ultrashort laser measurements. The joint program will allow IBM scientists to be involved extensively and continuously in the thesis education of several Columbia Ph.D students. Initial experiments will involve measurements of GaAs/Ge system, with subsequent work focusing on a study of Si/SiGe interfaces. ***

9424252 Osgood哥伦比亚大学教授Richard Osgood与IBM - t.j. Watson实验室的一个研究小组（目前由Tony Heinz领导）将进行一项合作研究。该合作将侧重于半导体表面和界面的电子动力学的超短脉冲（即飞秒和皮秒）激光测量。提出的工作将允许研究使用超短脉冲技术来测量单晶半导体表面或其附近的电子动力学。这项合作将从1995年3月T.J.沃森实验室开始为期三个月的访问，并将使用那里广泛的实验设施（这是独特的，因此在哥伦比亚大学没有）进行超短激光测量。该联合项目将允许IBM科学家广泛而持续地参与哥伦比亚大学博士生的论文教育。最初的实验将包括GaAs/Ge系统的测量，随后的工作将集中在Si/SiGe界面的研究上。＊＊＊