Fundamental Ultrashort Laser Studies of Electron Dynamics atSemiconductor Surfaces: Photoemission and Chemistry

9424252奥斯古德一项合作研究，涉及哥伦比亚大学教员理查德·奥斯古德教授与IBM - T的一个研究小组的合作。目前由Tony海因茨领导的J.沃森实验室将进行。 该合作将专注于超短脉冲（即飞秒和皮秒）激光测量半导体表面和界面的电子动力学。 拟议的工作将允许使用超短脉冲技术的测量所需的单晶半导体表面或附近的电子动力学的研究。 合作将从1995年3月开始，对T. J.沃森实验室进行为期三个月的访问，并将利用那里的大量实验设施（这些设施是独一无二的，因此在哥伦比亚大学是没有的）进行超短激光测量。 该联合计划将使IBM的科学家能够广泛和持续地参与几个哥伦比亚博士生的论文教育。 最初的实验将涉及GaAs/Ge系统的测量，随后的工作集中在Si/SiGe界面的研究上。 ***

9424252 Osgood A cooperative research involving the collaboration of Professor Richard Osgood, a faculty member at Columbia University with a research group at IBM - T. J. Watson Laboratory, currently directed by Tony Heinz will be conducted. The collaboration will focus on ultrashort-pulse (i.e. femtosecond and picosecond) laser measurements of electron-dynamics at semiconductor surfaces and interfaces. The proposed work will allow a study of the use of ultrashort pulse techniques required for the measurements of electron dynamics at or near single-crystal semiconductor surfaces. The collaboration will begin with a three-month visit of T.J. Watson Laboratory starting in March 1995, and will use the extensive experimental facilities there (which are unique and therefore not available at Columbia University) for ultrashort laser measurements. The joint program will allow IBM scientists to be involved extensively and continuously in the thesis education of several Columbia Ph.D students. Initial experiments will involve measurements of GaAs/Ge system, with subsequent work focusing on a study of Si/SiGe interfaces. ***