Investigation of the Surface Chemical Physics of Light- Enhanced Epitaxy on II-VI Semiconductor Surfaces

9225134奥斯古德将对在特定II-VI化合物半导体的光增强MOCVD(或MOMBE)外延中重要的基本表面化学机制进行研究。这项研究将利用飞行时间质谱学和全内反射红外光谱以及各种标准超高真空表面探测器来确定II-VI表面光诱导反应的尚不清楚的机制。此外，还将测量反应截面、产率和产物，在这些测量过程中，将考虑适当制备原子清洁表面的技术。研究的主要表面将是那些在锌硒和碲镉上的表面。这项研究有望深入了解引发反应的过程，并指导II-VI材料外延的光源波长、前体分子和一般生长条件的选择。这项研究有望加深对表面光辅助化学及其与化合物半导体材料光辅助外延的关系的基本理解。从应用的角度来看，研究结果将为使用激光和其他光源在MOCVD外延室中进行图案化提供指导，并将对II-VI光电子学技术的普遍进步产生重要影响，从而提高用于计算、信息处理和电信的先进器件和集成电路的性能。***

9225134 Osgood Investigations of fundamental surface-chemical mechanisms important in light-enhanced MOCVD (or MOMBE) epitaxy of specific II-VI compound semiconductors will be conducted. The research will utilize time-of-flight mass spectroscopy and total-internal-reflection infrared spectroscopy as well as a variety of standard UHV surface probes to determine the as-yet-unknown mechanisms for photo-induced reactions on II-VI surfaces. In addition, reaction cross-sections, yields, and products will be measured, and in the course of these measurements, consideration will be given to techniques for proper preparation of atomically clean surfaces. The primary surfaces for study will be those on ZnSe and CdTe. The study is expected to give insight into the processes initiating reactions and to guide selection of light-source wavelengths, precursor molecules, and general growth conditions for epitaxy of II-VI materials. %%% This research is expected to provide deeper fundamental understanding of photo-assisted chemistry on surfaces and its relation to photo-assisted epitaxy of compound semiconductor materials. From an application point of view, the results will provide guidance for the use of lasers and other light sources to do patterning in an MOCVD epitaxy chamber, and will be important to the general advancement in the technology of II-VI optoelectronics leading to improvements in the performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***