Investigation of the Surface Chemical Physics of Light- Enhanced Epitaxy on II-VI Semiconductor Surfaces

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9225134 Osgood Investigations of fundamental surface-chemical mechanisms important in light-enhanced MOCVD (or MOMBE) epitaxy of specific II-VI compound semiconductors will be conducted. The research will utilize time-of-flight mass spectroscopy and total-internal-reflection infrared spectroscopy as well as a variety of standard UHV surface probes to determine the as-yet-unknown mechanisms for photo-induced reactions on II-VI surfaces. In addition, reaction cross-sections, yields, and products will be measured, and in the course of these measurements, consideration will be given to techniques for proper preparation of atomically clean surfaces. The primary surfaces for study will be those on ZnSe and CdTe. The study is expected to give insight into the processes initiating reactions and to guide selection of light-source wavelengths, precursor molecules, and general growth conditions for epitaxy of II-VI materials. %%% This research is expected to provide deeper fundamental understanding of photo-assisted chemistry on surfaces and its relation to photo-assisted epitaxy of compound semiconductor materials. From an application point of view, the results will provide guidance for the use of lasers and other light sources to do patterning in an MOCVD epitaxy chamber, and will be important to the general advancement in the technology of II-VI optoelectronics leading to improvements in the performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***