Investigation of the Chemical Physics of Light Enhanced Epitaxy on II-VI Semiconductor Surfaces

9632456奥斯古德本研究项目的目的是为更大的非平衡化学在半导体表面的基本理解适合于先进的方法外延生长的II-VI薄膜，包括新的表面清洗/制备技术，和路线的顺序反应，适用于原子层外延技术。 总体目标是了解基本的微观机制，在两类模型分子系统的光辅助外延（MOCVD，MOMBE和ALE）;金属烷基（二甲基锌和二乙基镉）和VI族卤化物（H2S和H2Se）的CdTe和ZnSe表面将进行研究。 将使用俄歇和光电子能谱沿着热解吸和飞行时间质谱来评估反应产物和结合位点、喷射碎片平移能和反应横截面。该项目是多学科的，将基础材料化学和材料科学合成与加工研究与先进的表征工具和分析方法相结合，以解决技术相关性和高潜在回报的热门领域的前沿问题。 该研究将为先进电子/光子器件和集成电路的几个方面提供基础材料科学知识。 从该研究项目中获得的知识和理解预计将通过提供基本理解和设计和生产改进材料和材料组合的基础，以一般方式提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9632456 Osgood This research project aims for greater fundamental understanding of non-equilibrium chemistries at semiconductor surfaces appropriate for advanced approaches to epitaxial growth of II-VI thin films, including new surface cleaning/preparation techniques, and routes to sequential reactions which are applicable to the technique of atomic layer epitaxy. The overall objective is to understand fundamental microscopic mechanisms in two classes of model molecular systems for light-assisted epitaxies(MOCVD, MOMBE, and ALE); metal alkyls(di-methyl zinc and di-ethyl cadmium) and Group VI halides(H2S and H2Se) on CdTe and ZnSe surfaces will be studied. Auger and photoelectron spectroscopies along with thermal desorption and time of flight mass spectroscopy will be used to assess reaction products and binding sites, ejected fragment translational energy, and reaction cross sections. %%% The project is multidisciplinary combining fundamental materials chemistry and materials science synthesis and processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of technological relevance and high potential payoff. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced electronic/photonic devices and integrated circuitry. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***