Adsorption Sites and Nucleation in Materials Deposition on Silicon and Hydrogen-Terminated Silicon Surfaces

硅和氢封端硅表面材料沉积中的吸附位点和成核

• 批准号: 9424296
• 负责人: George Flynn
• 金额: $ 30万
• 依托单位: Columbia University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-06-15 至 1999-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9424296&HistoricalAwards=false
• 关键词: Adsorption; Sites; Nucleation; Materials; Deposition

9424296 Bent The goal of this research is to obtain an atomic and molecular level understanding of film nucleation on silicon substrates through a combination of infrared(IR) vibrational spectroscopy and scanning tunneling microscopy(STM). By combining IR with STM, a number of important issues in materials deposition and etching on silicon surfaces -- issues which are fundamental to understanding current microelectronics processes and to developing future technologies will be addressed definitively. Initially the focus will be on exploring the limits of the approach with emphasis on the GaAs/Si system as well as emphasis on the oxidation of silicon. The GaAs/Si system will test the limitations of the experimental approach since this is a system where the IR intensities are expected to be particularly weak. Silicon oxidation will also be studied both because of its technological importance and because it represents a system where high quality and interesting IR results at low frequencies using CoSi2-implanted silicon samples can be obtained. The systems that will be investigated include: oxidation of Si(100) by water and by ethanol as a model system for the TEOS (tetraethoxysilane) MOCVD process. %%% The characterization techniques used in this research provide site specific "fingerprints" of bonding at surfaces, and the fingerprint from each of these techniques places constraints on the interpretation of the other which permits more definitive conclusions than would be possible from either of the techniques alone. Because of the significance of these materials for electronic and photonic applications, it is important to study the details of elementary chemical and physical processes, and to understand fundamental features of structure/property relationships. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. ***

9424296 Bent本研究的目标是通过红外（IR）振动光谱和扫描隧道显微镜（STM）的组合，获得对硅衬底上薄膜成核的原子和分子水平的理解。 通过将IR与STM相结合，将明确解决硅表面上的材料沉积和蚀刻中的一些重要问题-这些问题对于理解当前微电子工艺和开发未来技术至关重要。 最初的重点将是探索的方法，重点是GaAs/Si系统的限制，以及强调硅的氧化。GaAs/Si系统将测试实验方法的局限性，因为这是一个IR强度预计特别弱的系统。 硅氧化也将进行研究，因为它的技术重要性，因为它代表了一个系统，在低频率下使用CoSi 2注入硅样品可以获得高品质和有趣的IR结果。 将被研究的系统包括：Si（100）的氧化，通过水和乙醇作为模型系统的TEOS（四乙氧基硅烷）MOCVD工艺。本研究中使用的表征技术提供了表面粘合的特定位置“指纹”，并且这些技术中的每一种的指纹都对另一种的解释施加了限制，这使得比单独使用任何一种技术都可能得出更明确的结论。 由于这些材料对电子和光子应用的重要性，研究基本化学和物理过程的细节以及理解结构/性质关系的基本特征是很重要的。 该计划的一个重要特点是在材料研究的基础和技术重要领域对学生进行培训。***