NSF Young Investigator: Surface Chemistry at Semiconductor Interfaces

这个国家科学基金会青年研究者项目是在 表面化学的一般领域，特别侧重于 半导体表面的表征。 在五年任期内， 在这个奖项中，Maboudian教授和她的学生将进行 氢与烃类相互作用基础研究 铟锑表面，作为镓的有用模型 砷化物半导体 这种化学反应将使用广泛的 一系列表面敏感技术，如X射线光电子 光谱学、低能电子衍射、俄歇和高分辨率 电子能量损失谱法自组装单分子膜的应用 为了提供无反应性、无缺陷的半导体表面， 在这个研究项目的过程中， 该项目在分析和表面化学计划的 化学司，应产生重要的见解，结构， 半导体材料在电子学中非常重要 行业 此外，该奖项将使马布迪安教授， 促进她作为研究人员和教育工作者的全面专业发展 在伯克利的加州大学。

This National Science Foundation Young Investigator project is in the general area of surface chemistry, with a specific focus on the characterization of semiconductor surfaces. During the five-year tenure of this award, Professor Maboudian and her students will carry out fundamental studies on the interaction of hydrogen and hydrocarbons with indium-antimony surfaces, which serve as useful models for gallium arsenide semiconductors. This chemistry will be explored using a wide range of surface sensitive techniques, such as x-ray photoelectron spectroscopy, low energy electron diffraction, Auger, and high resolution electron energy loss spectrometry. The use of self-assembled monolayers to provide unreactive, defect free semiconductor surfaces will also be explored during the course of this research project. This project, in the Analytical and Surface Chemistry Program of the Chemistry Division, should yield important insights into the structure of semiconductor materials that are of great importance in the electronics industry. Additionally, this award will enable Professor Maboudian to further her overall professional development as a researcher and educator at the University of California at Berkeley.