NSF Young Investigator: Surface Chemistry at Semiconductor Interfaces

这个国家科学基金会青年研究员项目是在表面化学的一般领域，特别关注半导体表面的表征。在该奖项的五年任期内，Maboudian教授和她的学生将开展氢和碳氢化合物与铟-锑表面相互作用的基础研究，这些表面可以作为砷化镓半导体的有用模型。将使用广泛的表面敏感技术来探索这种化学，例如X射线光电子能谱、低能电子衍射、俄歇和高分辨率电子能量损失谱。在这项研究项目的过程中，还将探索使用自组装单分子膜来提供无反应、无缺陷的半导体表面。这个项目在化学部的分析和表面化学项目中，应该会对半导体材料的结构产生重要的见解，这些材料在电子工业中非常重要。此外，这一奖项将使Maboudian教授能够进一步发展她作为加州大学伯克利分校研究员和教育工作者的整体专业发展。

This National Science Foundation Young Investigator project is in the general area of surface chemistry, with a specific focus on the characterization of semiconductor surfaces. During the five-year tenure of this award, Professor Maboudian and her students will carry out fundamental studies on the interaction of hydrogen and hydrocarbons with indium-antimony surfaces, which serve as useful models for gallium arsenide semiconductors. This chemistry will be explored using a wide range of surface sensitive techniques, such as x-ray photoelectron spectroscopy, low energy electron diffraction, Auger, and high resolution electron energy loss spectrometry. The use of self-assembled monolayers to provide unreactive, defect free semiconductor surfaces will also be explored during the course of this research project. This project, in the Analytical and Surface Chemistry Program of the Chemistry Division, should yield important insights into the structure of semiconductor materials that are of great importance in the electronics industry. Additionally, this award will enable Professor Maboudian to further her overall professional development as a researcher and educator at the University of California at Berkeley.