Investigation of Growth and Dopant Incorporation in Silicon Carbide Nanowires

碳化硅纳米线的生长和掺杂剂掺入研究

• 批准号: 1207053
• 负责人: Roya Maboudian
• 金额: $ 29.14万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-06-01 至 2016-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1207053&HistoricalAwards=false
• 关键词: Investigation; Growth; Dopant; Incorporation; Silicon

NON-TECHNICAL DESCRIPTION: Semiconducting nanowires, high aspect ratio rods with diameters of order tens of nanometers, have received much attention in recent years, due to their anticipated (and in some cases observed) novel optical, thermal, electrical, and mechanical behavior. To date, silicon (Si) nanowires have been the most extensively studied owing both to the technological relevance of the material and to the relative simplicity of the synthesis. However, a number of critical applications, such as high-efficiency electrochemical storage devices and high brightness miniature neutron sources, highlight the limitations of Si nanowires and the need for more robust materials systems. Silicon carbide (SiC) nanowires were chosen for these studies because of the exceptional physicochemical stability of this material. This research project aims to gain a fundamental understanding of the growth mechanism of silicon carbide nanowires and the parameters that control their morphological and electrical properties.TECHNICAL DETAILS: The specific SiC nanowire synthetic approach chosen is Ni-catalyzed chemical vapor deposition from single precursor methyltrichlorosilane and with ammonia as a dopant. The primary analytical techniques include high-resolution transmission electron microscopy (for detailed structural studies), Raman spectroscopy (for structural, vibrational, and optical properties), atom probe tomography (for chemical composition mapping with sub-nm resolution) and field-effect transistor measurements (for electrical characterization, including the Fermi level position and carrier concentration and mobility). From a fundamental point of view, this research is enabling a better understanding of the interplay between the growth parameters (e.g., catalyst, growth temperature, dopant precursor) and the structural, morphological and electrical properties of SiC nanowires. From the applied point of view, the research is highlighting the key factors for synthesizing SiC nanowires with tailored doping for such applications as emitters for vacuum electronics, corrosion resistant charge storage devices, and other energy, sensing, and harsh environment applications. The project is providing core training for graduate and undergraduate students. A variety of outreach activities, including the participation of underrepresented students in research, are underway. The results of this work are being incorporated into talks given to the general public by the researchers and are also being widely disseminated through a variety of means such as refereed journals, conferences, lectures, and demonstration.This project is co-funded by the Electronic and Photonic Materials (EPM) and Ceramics (CER) Programs in the Division of Materials Research (DMR).

非技术描述：半导体纳米线，直径为几十纳米的高纵横比棒，由于其预期的（在某些情况下观察到的）新颖的光学、热学、电学和机械性能，近年来受到了广泛关注。迄今为止，由于材料的技术相关性和相对简单的合成，硅（Si）纳米线得到了最广泛的研究。然而，许多关键应用，如高效电化学存储设备和高亮度微型中子源，突出了硅纳米线的局限性和对更坚固的材料系统的需求。碳化硅（SiC）纳米线之所以被选择用于这些研究，是因为这种材料具有优异的物理化学稳定性。本研究项目旨在对碳化硅纳米线的生长机制以及控制其形态和电学性能的参数有一个基本的了解。技术细节：所选择的特定SiC纳米线合成方法是镍催化化学气相沉积，以单一前驱体甲基三氯硅烷为原料，氨为掺杂剂。主要的分析技术包括高分辨率透射电子显微镜（用于详细的结构研究）、拉曼光谱（用于结构、振动和光学性质）、原子探针层析成像（用于亚纳米分辨率的化学成分测绘）和场效应晶体管测量（用于电学表征，包括费米能级位置、载流子浓度和迁移率）。从基本的角度来看，本研究使人们能够更好地理解生长参数（如催化剂、生长温度、掺杂前驱体）与SiC纳米线的结构、形态和电学性能之间的相互作用。从应用的角度来看，该研究突出了合成具有定制掺杂的SiC纳米线的关键因素，用于真空电子器件，耐腐蚀电荷存储器件以及其他能源，传感和恶劣环境应用。该项目为研究生和本科生提供核心培训。各种推广活动正在进行中，包括让代表性不足的学生参与研究。这项工作的结果被纳入研究人员对公众的演讲中，并通过各种方式广泛传播，如评审期刊、会议、讲座和示范。该项目由材料研究部（DMR）的电子和光子材料（EPM）和陶瓷（CER）项目共同资助。