Giant Magnetoresistive Tunneling Transistor

巨磁阻隧道晶体管

• 批准号: 9461541
• 负责人: Russell Beech
• 金额: $ 6.49万
• 依托单位: Nonvolatile Electronics Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-05-01 至 1996-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9461541&HistoricalAwards=false
• 关键词: Giant; Magnetoresistive; Tunneling; Transistor

This Small Business Innovation Research Phase I project will demonstrate the feasibility of a Giant Magnetoresistance Ratio (GMR) tunneling transistor. GMR tunneling devices can potentially have a room temperature magnetoresistance of 50% (many times the magnetoresistance of simple two-layer magnetic sandwiches) with a high impedance and high areal density, and can operate with small magnetic fields (one Oe). These devices can be configured for memory, field sensors, magnetic amplifiers, and magnetic logic, which can, in turn, miniaturize electronics and greatly reduce power consumption for a wide variety of applications. The fundamental GMR tunneling device consists of two ferromagnetic films separated by a very thin ((20 () insulating layer. The tunneling current depends on the relative magnetic states of the magnetic layers in a fashion similar to that indicated by recent work on GMR materials. For the tunneling transistor, an additional metal line is used to produce the magnetic field required to modulate the magnetic states of the two magnetic layers. Characterization of device current with respect to applied voltage, material properties and film thicknesses, and magnetic states will be used to refine an existing model. The tunneling transistor will be breadboarded to illustrate memory operation, magnetic field sensing, magnetic amplification, and magnetic logic.

这个小企业创新研究第一阶段项目将展示巨磁阻比（GMR）隧道晶体管的可行性。GMR隧道装置具有高阻抗和高面密度，室温磁阻可能达到50%（是简单的两层磁性三明治的磁阻的许多倍），并且可以在小磁场（1 Oe）下工作。这些器件可以配置为存储器、现场传感器、磁放大器和磁逻辑，这反过来又可以使电子器件小型化，并大大降低各种应用的功耗。基本的GMR隧道装置由两个铁磁薄膜组成，中间隔着一层非常薄的绝缘层。隧穿电流取决于磁层的相对磁态，其方式与最近对GMR材料的研究表明的类似。对于隧道晶体管，额外的金属线用于产生调制两个磁性层的磁性状态所需的磁场。器件电流与外加电压、材料特性和薄膜厚度以及磁态的关系将用于改进现有模型。隧道晶体管将用面包板来说明存储器操作、磁场感应、磁放大和磁逻辑。