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SBIR Phase II: Synthesis and Characterization of High Purity ZnGeP2

SBIR Phase II: Synthesis and Characterization of High Purity ZnGeP2
SBIR 第二阶段:高纯度 ZnGeP2 的合成和表征
批准号:
9501330
负责人:
Warren Ruderman
金额:
$30.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-04-01 至 1999-03-31

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中文摘要
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英文摘要
9501330 Ruderman This Small Business Innovation Research Phase II project addresses the need for a process to grow large Zinc-Germanium-Phosphorous (Zn-Ge-P) single crystals of high optical quality and low absorption in the 1 to 3 micron optical region, at low cost. The research objectives include: (1) measuring phase equilibria in the Zn-Ge-P system; (2) extending understanding of the defect structures in these crystals; (3) determining the role of important impurities; (4) developing a new synthesis and crystal growth process; (5) annealing studies of grown crystals to decrease optical absorption; and (6) extensive characterization of grown crystals. These Zn-Ge-P crystal with improved optical transmission and crystal quality will provide efficient generation of tunable laser radiation from 2.5 to 12 microns. Potential applications include remote detection of contaminants, defense uses in laser jamming and warning systems and enhanced spectral analysis techniques for chemical analysis.
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