SBIR Phase II: Synthesis and Characterization of High Purity ZnGeP2

SBIR 第二阶段：高纯度 ZnGeP2 的合成和表征

• 批准号: 9501330
• 负责人: Warren Ruderman
• 金额: $ 30万
• 依托单位: INRAD, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-04-01 至 1999-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9501330&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Synthesis; Characterization

9501330 Ruderman This Small Business Innovation Research Phase II project addresses the need for a process to grow large Zinc-Germanium-Phosphorous (Zn-Ge-P) single crystals of high optical quality and low absorption in the 1 to 3 micron optical region, at low cost. The research objectives include: (1) measuring phase equilibria in the Zn-Ge-P system; (2) extending understanding of the defect structures in these crystals; (3) determining the role of important impurities; (4) developing a new synthesis and crystal growth process; (5) annealing studies of grown crystals to decrease optical absorption; and (6) extensive characterization of grown crystals. These Zn-Ge-P crystal with improved optical transmission and crystal quality will provide efficient generation of tunable laser radiation from 2.5 to 12 microns. Potential applications include remote detection of contaminants, defense uses in laser jamming and warning systems and enhanced spectral analysis techniques for chemical analysis.

9501330 鲁德曼 该小型企业创新研究第二阶段项目解决了以低成本在1至3微米光学区域生长高光学质量和低吸收的大型锌锗磷（Zn-Ge-P）单晶的需求。 研究目标包括：（1）测量Zn-Ge-P系统中的相平衡;（2）扩展对这些晶体中的缺陷结构的理解;（3）确定重要杂质的作用;（4）开发新的合成和晶体生长过程;（5）对生长的晶体进行退火研究以降低光吸收;以及（6）对生长的晶体进行广泛的表征。 这些Zn-Ge-P晶体具有改善的光学透射率和晶体质量，将提供2.5至12微米的可调谐激光辐射的有效产生。 潜在的应用包括污染物的远程探测、激光干扰和警报系统的防御用途以及用于化学分析的增强光谱分析技术。