CAREER: Optoelectronic Materials and Device Characterization

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9501703 Lord The main educational goals of this project are to further the development of courses in the area of optoelectronic materials and devices. This includes: 1) Improving the required junior-level Electronics I and II sequence by encompassing basic concepts of device physics and adding more laboratories on optoelectronic devices. 2) Continuing the development of the lecture component of an elective course on Optoelectronic Materials and Devices and adding a laboratory to it. These courses address such topics as crystal growth, lasers, photodetectors, and fiber optic systems. 3) Developing a new elective course on Materials Characterization for electrical engineers and other interested students. Techniques covered in this course would include atomic force microscopy (AFM), photoluminescence (PL), and X-ray diffraction. The main research goal of this project is to explore the growth of lattice mismatched materials for long wavelength device operation. Low temperature compositionally-graded buffer layers will be used in the molecular beam epitaxial (MBE) growth of lattice mismatched materials to produce photodetectors at long wavelengths such as 2 um where lattice-matched materials are not available. Different profiles for accomplishing a compositionally-graded buffer layer including linear composition grading, linear source temperature grading, and small step grading will be compared. Such materials will be characterized using various techniques including atomic force microscopy (AFM), photoluminescence (PL), transmission, photocurrent, and X-ray diffraction. This research will contribute significantly to the growth of a multitude of technologically interesting materials on the relatively small number of available high quality substrates. ***