CAREER: Optoelectronic Materials and Device Characterization

职业：光电材料和器件表征

• 批准号: 9501703
• 负责人: Susan Lord
• 金额: $ 20万
• 依托单位: Bucknell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-07-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9501703&HistoricalAwards=false
• 关键词: CAREER; Optoelectronic; Materials; Device; Characterization

9501703 Lord The main educational goals of this project are to further the development of courses in the area of optoelectronic materials and devices. This includes: 1) Improving the required junior-level Electronics I and II sequence by encompassing basic concepts of device physics and adding more laboratories on optoelectronic devices. 2) Continuing the development of the lecture component of an elective course on Optoelectronic Materials and Devices and adding a laboratory to it. These courses address such topics as crystal growth, lasers, photodetectors, and fiber optic systems. 3) Developing a new elective course on Materials Characterization for electrical engineers and other interested students. Techniques covered in this course would include atomic force microscopy (AFM), photoluminescence (PL), and X-ray diffraction. The main research goal of this project is to explore the growth of lattice mismatched materials for long wavelength device operation. Low temperature compositionally-graded buffer layers will be used in the molecular beam epitaxial (MBE) growth of lattice mismatched materials to produce photodetectors at long wavelengths such as 2 um where lattice-matched materials are not available. Different profiles for accomplishing a compositionally-graded buffer layer including linear composition grading, linear source temperature grading, and small step grading will be compared. Such materials will be characterized using various techniques including atomic force microscopy (AFM), photoluminescence (PL), transmission, photocurrent, and X-ray diffraction. This research will contribute significantly to the growth of a multitude of technologically interesting materials on the relatively small number of available high quality substrates. ***

9501703主这个项目的主要教育目标是进一步发展光电材料和器件领域的课程。这包括：1)通过包含器件物理的基本概念和增加更多的光电子器件实验室，改进所需的初级电子学I和II序列。2)继续发展光电子材料与器件选修课的授课内容，增设实验室。这些课程涉及晶体生长、激光、光电探测器和光纤系统等主题。3)为电气工程师和其他感兴趣的学生开发一门新的材料表征选修课。本课程所涉及的技术包括原子力显微镜(AFM)、光致发光(PL)和X射线衍射。本项目的主要研究目标是探索用于长波长器件工作的晶格失配材料的生长。低温成分梯度缓冲层将用于晶格失配材料的分子束外延(MBE)生长，以在晶格匹配材料不可用的情况下产生长波长的光电探测器，如2微米。将比较用于实现成分分级缓冲层的不同轮廓，包括线性成分分级、线性源温度分级和小步长分级。这些材料将使用各种技术进行表征，包括原子力显微镜(AFM)、光致发光(PL)、透射率、光电流和X射线衍射。这项研究将大大有助于在数量相对较少的可用高质量衬底上生长大量具有技术意义的材料。***