Postdoc: Parallel Multizone Adaptive Scheme for Multiphase Systems with Free and Moving Boundaries

博士后：具有自由和移动边界的多相系统的并行多区域自适应方案

• 批准号: 9503988
• 负责人: Vishwanath Prasad
• 金额: $ 4.62万
• 依托单位: SUNY at Stony Brook
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-06-01 至 1997-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9503988&HistoricalAwards=false
• 关键词: Postdoc; Parallel; Multizone; Adaptive; Scheme

9503988 Prasad The object of the proposed research is to develop a parallelized multizone adaptive scheme for accurate and efficient simulations of materials processes of industrial importance. The final software will be able to simulate three-dimensional transient processes involving diffusion and convection of heat, mass, and species, and radiation heat transfer together with melting/solidification, flows induced by buoyancy and capillary forces, and effects of electrical and magnetic fields. The use of a generalized governing equation will allow consideration of many different materials with various phases in a single computational domain. The numerical scheme will employ (a) the multizone adaptive grid generation (MAGG) technique for the discretization of physical domains of arbitrary shape, and (b) the curvilinear finite-volume(CFV) approach for the discretization of the govening partial differential equations and development of the finite difference equations. An efficient parallel algorithm suitable for multiphase systems will be developed based on the massively-parallel distributed-memory MIMD techniques and will take advantage of the physics of the problem to develop a domain-decomposition strategy. Load balance, communication, and migration of elements will be given special attention in the development. The immediate implementation of this model will be made to the CZ and CCZ growth of silicon single crystals (a project sponsored by NSF and Ferrofluidics Corporation) and one-step in-situ synthesis and high pressure MLEK growth of indium phosphide crystals (an AFOSR project). The proposed parallel computer model will be able to simulate many kinds of complex materials processes involving free and moving boundaries that are not possible by the present techniques.

所提出的研究的目标是开发一种并行的多区域自适应方案，用于精确和有效地模拟工业重要材料过程。最终的软件将能够模拟三维瞬态过程，包括热量、质量和物质的扩散和对流，辐射传热以及熔化/凝固，浮力和毛细力引起的流动，以及电场和磁场的影响。广义控制方程的使用将允许在单个计算域中考虑具有不同相的许多不同材料。数值方案将采用(a)多区域自适应网格生成（MAGG）技术对任意形状的物理域进行离散化，以及(b)曲线有限体积（CFV）方法对控制偏微分方程进行离散化，并开发有限差分方程。基于大规模并行分布式存储MIMD技术，将开发一种适用于多相系统的高效并行算法，并利用问题的物理特性来开发一种域分解策略。在开发过程中，将特别关注负载平衡、通信和元素迁移。该模型将立即应用于硅单晶的CZ和CCZ生长（NSF和Ferrofluidics公司资助的项目）和磷化铟晶体的一步原位合成和高压MLEK生长（AFOSR项目）。所提出的并行计算机模型将能够模拟涉及自由和移动边界的多种复杂材料过程，这是目前技术所不可能实现的。