Support for 3rd International Workshop on Modeling in Crystal Growth at Stony Brook: Expanding the Research Base and Student Participation

支持石溪第三届晶体生长建模国际研讨会:扩大研究基础和学生参与

基本信息

  • 批准号:
    9910538
  • 负责人:
  • 金额:
    $ 1万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    1999
  • 资助国家:
    美国
  • 起止时间:
    1999-09-15 至 2001-06-30
  • 项目状态:
    已结题

项目摘要

ABSTRACTProposal Number: CTS 9910538Principal Investigator: V. PrasadThis grant will support participation by US scientists, faculty, and graduate students at the Third International Workshop on Modeling in Crystal Growth.The intent of the funding is to expand the research base and student participation. The previous two workshops were held in Germany and Belgium and with the increased emphasis on crystal growth it is appropriate that a workshop be held in the United States. The workshop will cover a broad range of topics related to mathematical modeling and numerical analysis of the growth of single crystals and crystalline layers. It will focus on physical phenomena taking place at the macro-, meso-, and micro-scale, global modeling of the processes, model-based design of experiments, and the use of the models for prototyping and control. Speakers, who do not normally work in crystal growth but whose expertise will assist in understanding the growth process, will give presentations in the areas of thermal manufacturing, computational material processing, process optimization, virtual reality, and control. An abstract proceeding and a volume containing peer reviewed papers will be published.
摘要提案编号:CTS 9910538首席研究员:V. Prasad该基金将支持美国科学家、教师和研究生参加第三届晶体生长建模国际研讨会。该基金的目的是扩大研究基础和学生参与。前两次讲习班分别在德国和比利时举行,随着对晶体生长的日益重视,在美国举行一次讲习班是适当的。该研讨会将涵盖与单晶和结晶层生长的数学建模和数值分析相关的广泛主题。 它将侧重于发生在宏观,中观和微观尺度的物理现象,过程的全球建模,基于模型的实验设计,以及使用模型进行原型设计和控制。 演讲者通常不从事晶体生长,但其专业知识将有助于理解生长过程,他们将在热制造,计算材料处理,过程优化,虚拟现实和控制等领域进行演讲。将出版一份摘要论文集和一卷同行评议论文。

项目成果

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专利数量(0)

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Vishwanath Prasad其他文献

Vishwanath Prasad的其他文献

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{{ truncateString('Vishwanath Prasad', 18)}}的其他基金

Collaborative Research: Supercritical Fluids and Heat Transfer - Delineation of Anomalous Region, Ultra-long Distance Gas Transport without Recompression, and Thermal Management
合作研究:超临界流体与传热——异常区域的描绘、无需再压缩的超长距离气体传输以及热管理
  • 批准号:
    2327571
  • 财政年份:
    2023
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
EAGER: Experimental Methods and Measurements of Anomalous Properties of Supercritical Fluids and their Mixtures
EAGER:超临界流体及其混合物反常性质的实验方法和测量
  • 批准号:
    2231393
  • 财政年份:
    2022
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Modernization of Multi-Scale Characterization, Analysis, and Synthesis Facility for Materials and Devices
材料和器件多尺度表征、分析和合成设施的现代化
  • 批准号:
    0963509
  • 财政年份:
    2010
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
The Biomedical Engineering Partnership Program at FIU: Fostering Technology Entrepreneurship, Commercialization, and Clinical Implementation
佛罗里达国际大学生物医学工程合作伙伴计划:促进技术创业、商业化和临床实施
  • 批准号:
    0227869
  • 财政年份:
    2003
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Travel Support for Young Scientists to Participate in the Fifth ISHMT-ASME Heat and Mass Transfer Conference (India) and Expand Global Research Perspectives
为年轻科学家参加第五届 ISHMT-ASME 传热传质会议(印度)并拓展全球研究视野提供差旅支持
  • 批准号:
    0109394
  • 财政年份:
    2001
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Group Travel to Participate in the Fourth ISHMT-ASME Heat and Mass Transfer Conference and Expand Research Interaction, January 2000, Pune, India
团体旅行参加第四届 ISHMT-ASME 传热传质会议并扩大研究互动,2000 年 1 月,印度浦那
  • 批准号:
    9906952
  • 财政年份:
    1999
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Workshop on Thermal Aspects of Manufacturing and Materials Processing: Emerging Technologies and Research Issues
制造和材料加工热学问题研讨会:新兴技术和研究问题
  • 批准号:
    9807074
  • 财政年份:
    1998
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Continuous Czochralski Growth of Silicon Single Crystals
硅单晶的连续直拉法生长
  • 批准号:
    9414606
  • 财政年份:
    1995
  • 资助金额:
    $ 1万
  • 项目类别:
    Continuing Grant
Postdoc: Parallel Multizone Adaptive Scheme for Multiphase Systems with Free and Moving Boundaries
博士后:具有自由和移动边界的多相系统的并行多区域自适应方案
  • 批准号:
    9503988
  • 财政年份:
    1995
  • 资助金额:
    $ 1万
  • 项目类别:
    Standard Grant
Molecular Dynamics Simulation of Thin Film Depositions on Plane Substrates and in Vias
平面基板和通孔中薄膜沉积的分子动力学模拟
  • 批准号:
    9303007
  • 财政年份:
    1993
  • 资助金额:
    $ 1万
  • 项目类别:
    Continuing Grant

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