Microcavity Physics: Magnetoexciton Quantum-Dot Lasers and Normal-Mode Coupling

分子束外延已经产生了将电子和空穴限制在一个方向上的量子威尔斯和将光子限制在一个方向上的微腔。 在这个提议中，通过使用高达14特斯拉的磁场在垂直于半导体腔生长方向的一个或两个方向上改变量子阱能级来研究电子的2D和3D约束。 通过施加无场、平行于层的场和垂直于激光器的场，提出分别使用相同的量子阱和微腔来比较量子威尔斯、量子线和量子点的载流子弛豫和微腔激射。 虽然从根本上构思和导向，这项研究是战略性的低阈值微激光器的制造中使用的信息高速公路，光学数据存储，大面板显示器等。

Molecular beam epitaxy has led to quantum wells which confine electrons and holes in one direction and microcavities which confine photons in one direction. In this proposal, 2D and 3D confinement of electrons is studied by using a magnetic field of up to 14 Tesla to quantize the quantum-well energy levels in one or both of the directions perpendicular to the direction of growth of the semiconductor cavity. By applying no field, a field parallel to the layers, and a field perpendicular to the lasers it is proposed to compare carrier relaxation and microcavity lasing for quantum wells, quantum wires and quantum dots, respectively, using the same quantum well and microcavity. Although fundamentally conceived and oriented, this research is strategic for manufacturing of low- threshold microlasers for use in the information superhighway, optical data storage, large panel displays, etc.