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Nonlinear Photonic Crystal Nanocavities and Waveguides

Nonlinear Photonic Crystal Nanocavities and Waveguides
非线性光子晶体纳米腔和波导
批准号:
1101341
负责人:
Galina Khitrova
金额:
$32.58万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-06-01 至 2014-05-31

项目摘要

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中文摘要
翻译
目标。评估磷基分子束外延生长的层和量子点对单个量子点与光子晶体平板纳米腔(芯片上的固态纠缠)之间的量子极限强耦合的有效性。继2004年在图森展示了强耦合之后,全世界在改善真空拉比分裂与线宽的比率方面的进展令人失望地缓慢,这是开关和量子信息的实际应用所需的。由于对线宽的限制是腔Q,报道的高达700,000个GaAs-Splet/GaInP-牺牲层空腔的值与典型的30,000个GaAs/AlGaAs空腔相比,激励了这个项目来优化P基层和点的生长以实现强耦合。这项研究的成功将彻底改变半导体腔QED的整个领域。大部分基于P的生长是通过MOCVD(显然适合电子和激光)进行的,但表面太粗糙,无法制造高Q值的腔体。这个项目将首先为空的高Q空腔生长平坦的层,然后在平板的中心生长圆点。成功的主要影响将是更强大的半导体量子器件,更不容易受到光子从低Q腔逃逸导致的退相的影响。这将使这种器件在单光子开关和分离腔的内态之间的量子态转移方面更加有用。另一个重要影响是对研究生进行量子光学方面的培训,以及所需的低温和光谱学实验技能。指导RET教师和REU学生有助于吸引聪明的学生进入科学和工程职业。
英文摘要
Objective. Evaluate the efficacy of phosphorous-based MBE-grown layers and quantum dots for quantum-limit strong coupling between a single quantum dot and a photonic crystal slab nanocavity (solid-state entanglement on a chip).Intellectual Merit. Following demonstration of strong coupling in 2004 in Tucson, worldwide progress toward improving the ratio of vacuum Rabi splitting to linewidth, as needed for practical applications in switching and quantum information, has been disappointingly slow. Since the limitation on linewidth is cavity Q, reported values as high as 700,000 for GaAs-slab/GaInP-sacrificial-layer empty cavities compared with typically 30,000 in GaAs/AlGaAs motivate this project to optimize the growth of P-based layers and dots for strong coupling. Success could transform the whole field of semiconductor cavity QED. Much of the P-based growth has been by MOCVD (apparently adequate for electronics and lasers), but the surfaces are too rough for fabrication of high-Q cavities. This project would first grow flat layers for empty high-Q cavities and then grow dots within the center of the slab.Broader Impacts. The principal impact of success would be much more robust semiconductor quantum devices, much less susceptible to dephasing caused by photon escape from low-Q cavities. This would make the devices much more useful for single photon switches and for quantum state transfer between internal states of separated cavities. Training of graduate students in quantum optics and the required experimental skills of cryogenics and spectroscopy is another important impact. Mentoring RET teachers and REU students helps attract bright students into scientific and engineering careers.
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Semiconductor Cavity QED
  • 批准号:
    1205301
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $45.0万
  • 财政年份:
    2012
  • 负责人:
    Galina Khitrova
  • 依托单位:
Semiconductor Cavity QED
  • 批准号:
    1066456
  • 项目类别:
    Standard Grant
  • 资助金额:
    $14.5万
  • 财政年份:
    2011
  • 负责人:
    Galina Khitrova
  • 依托单位:
Semiconductor Cavity QED
  • 批准号:
    0757707
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $52.82万
  • 财政年份:
    2008
  • 负责人:
    Galina Khitrova
  • 依托单位:
Semiconductor Cavity QED
  • 批准号:
    0457096
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2005
  • 负责人:
    Galina Khitrova
  • 依托单位:
海外基金