Nonlinear Photonic Crystal Nanocavities and Waveguides

非线性光子晶体纳米腔和波导

• 批准号: 1101341
• 负责人: Galina Khitrova
• 金额: $ 32.58万
• 依托单位: University of Arizona
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-06-01 至 2014-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1101341&HistoricalAwards=false
• 关键词: Nonlinear; Photonic; Crystal; Nanocavities; Waveguides

Objective. Evaluate the efficacy of phosphorous-based MBE-grown layers and quantum dots for quantum-limit strong coupling between a single quantum dot and a photonic crystal slab nanocavity (solid-state entanglement on a chip).Intellectual Merit. Following demonstration of strong coupling in 2004 in Tucson, worldwide progress toward improving the ratio of vacuum Rabi splitting to linewidth, as needed for practical applications in switching and quantum information, has been disappointingly slow. Since the limitation on linewidth is cavity Q, reported values as high as 700,000 for GaAs-slab/GaInP-sacrificial-layer empty cavities compared with typically 30,000 in GaAs/AlGaAs motivate this project to optimize the growth of P-based layers and dots for strong coupling. Success could transform the whole field of semiconductor cavity QED. Much of the P-based growth has been by MOCVD (apparently adequate for electronics and lasers), but the surfaces are too rough for fabrication of high-Q cavities. This project would first grow flat layers for empty high-Q cavities and then grow dots within the center of the slab.Broader Impacts. The principal impact of success would be much more robust semiconductor quantum devices, much less susceptible to dephasing caused by photon escape from low-Q cavities. This would make the devices much more useful for single photon switches and for quantum state transfer between internal states of separated cavities. Training of graduate students in quantum optics and the required experimental skills of cryogenics and spectroscopy is another important impact. Mentoring RET teachers and REU students helps attract bright students into scientific and engineering careers.

客观的。评估磷基 MBE 生长层和量子点对单个量子点和光子晶体板纳米腔（芯片上的固态纠缠）之间的量子极限强耦合的功效。智力优点。继 2004 年在图森展示强耦合之后，世界范围内改善开关和量子信息实际应用所需的真空拉比分裂与线宽之比的进展却进展缓慢，令人失望。由于线宽的限制是腔 Q，据报道，GaAs 板/GaInP 牺牲层空腔的值高达 700,000，而 GaAs/AlGaAs 中的线宽通常为 30,000，这促使该项目优化 P 基层和点的生长，以实现强耦合。成功可能会改变半导体腔 QED 的整个领域。大部分 P 基生长是通过 MOCVD 进行的（显然足以用于电子和激光器），但表面对于制造高 Q 腔来说太粗糙。该项目将首先为空的高 Q 腔生长平坦层，然后在板的中心生长点。更广泛的影响。成功的主要影响将是更加坚固的半导体量子器件，更不易受到低 Q 腔中光子逃逸引起的相移的影响。这将使这些器件对于单光子开关和分离腔内部状态之间的量子状态转移更加有用。对研究生进行量子光学以及低温学和光谱学所需实验技能的培训是另一个重要影响。指导 RET 教师和 REU 学生有助于吸引聪明的学生进入科学和工程职业。