Japan STA Program: Investigation of the Deep Levels of GaN by Optical and Transient Capacitance Methods

点击翻译按钮获取中文摘要

9508780 Hacke This award supports a 24-month Science and Technology Agency of Japan Postdoctoral Fellowship for Dr. Peter Hacke of the Electrotechnical Laboratory of the Agency of Industrial Science and Technology (AIST) within the Ministry of International Trade and Industry (MITI) in Tsukuba, Japan. Dr. Hacke will work with Dr. Hideyo Okushi at the Electrotechnical Laboratory examining the physics of the gallium nitride (GaN) semiconductor. The proposed research aims to determine the nature of the impurities and defects in GaN that create carrier traps in the band gap that can reduce device performance. Specifically, the investigators would like to determine the cause of the deep donor levels known to exist in n-type GaN and examine for the existence of deeper levels. As a postdoctoral fellow, Dr. Hacke will have the opportunity to become familiar with research techniques and equipment at the Electrotechnical Laboratory while contributing to the overall research effort. Therefore, this proposal fulfills the objectives of the Program in its exchange and transfer of scientific knowledge through an international collaboration. ***