NSF-CGP Fellowship: Growth and Characterization of InGaN Active Layers for Improved Blue-Emitting Laser Diodes

点击翻译按钮获取中文摘要

Hacke 9802321 This award supports a 24-month research visit by Dr. Peter L. Hacke, currently a Postdoctoral Fellow, Institute of Physical and Chemical Research (RIKEN), Japan, for collaboration with Dr. Toshiyuki Tanahashi, Electron Devices and Materials Laboratories, Fujitsu Laboratories, Ltd., Atsugi, Japan. Their research is concerned with the growth and characterization of InGaN active layers for improved blue-emitting laser diodes. Characterization of these diodes is essential to finding solutions to problems which limit the operation, performance, and lifetime of these devices in commercial instruments. The research will be conducted at Fujitsu Laboratories which has a coherent group presently working on issues related to the operation of blue light laser diodes. Fujitsu is one of only a few companies worldwide reporting successful operation of a nitride-based blue laser diode. During his previous work in Japan, Dr. Hacke has visited the Fujitsu Laboratories and is aware of the research interests and capabilities of this research group. To this point in his career, Dr. Hacke has been engaged in fundamental research. The proposed research at Fujitsu Laboratories will provide experience in product development. This project is supported under the Science Fellowship Program between the National Science Foundation and the Japan Foundation Center for Global Partnership.