STM-Fabricated Magnets and their Influence on Semiconductor Electronics

9510518冯·莫尔纳这个由两个校区组成的跨学科项目使用了光学科学和凝聚态物理领域的尖端技术。超高真空扫描隧道显微镜将被用来直接在III-V半导体衬底和器件上合成单个和阵列的磁性结构。将使用微观霍尔棒磁强计、Aharonov-Bohm环、弹道传输和高灵敏度机械扭矩测量来检查结构的本征磁性行为。磁粒子对半导体中与自旋相关的电子态的影响将通过飞秒分辨的法拉第谱和发光光谱来研究。特别是，后一项研究包括空间分辨光学显微镜。这个实验和理论项目使用原子尺度光刻、低维电子移位和低温超快磁光光谱来研究量子磁结构。这项工作的一个独特方面是原位制造直径只有几十个原子的“纳米磁铁”，将对其光学和磁性进行研究。这项工作涵盖了半导体物理、光学和磁学。学生在光学科学和工程领域获得的培训将使他们为广泛的职业机会做好准备。纳米磁性半导体展示了目前还不完全了解的新颖的磁光现象，但人们认为它们作为可能的器件结构具有巨大的潜力。***

9510518 von Molnar This interdisciplinary, two-campus project employs cutting-edge techniques from the fields of optical science and condensed matter physics. An ultra-high-vacuum scanning tunneling microscope will be used to synthesize both individual and arrays of magnetic structures directly on III-V semiconductor substrates and devices. The intrinsic magnetic behavior of the structures will be examined using microscopic Hall bar magnetometers, Aharonov-Bohm rings, ballistic transport, and high-sensitivity mechanical torque measurements. The influence of magnet particles on the spin-dependent electronic state in semiconductors will be investigated through femto-second-resolved Faraday and luminescence spectroscopes. In particular, the latter studies include spatially-resolved optical microscopy. %%% This experimental and theoretical project employs atomic-scale lithography, low-dimensional electronic transpopt, and ultra-fast magnetooptical spectroscopies at low temperature to investigate quantum magnetic structures. A unique aspect of the work is the in situ fabrication of "nanomagnets" only a few dozen atoms in diameter, whose optical and magnetic properties will be investigated. The work encompasses semiconductor physics, optics, and magnetism. The training gained by students in the areas of optical science and engineering will prepare them for a wide spectrum of career opportunities. The nanosize magnetic semiconductors exhibit novel magnetooptical phenomena that are currently incompletely understood, but which are felt to have great potential as possible device structures. ***