Processing and Devices for Integrated Optoelectronics in GaN and Related Compounds

在过去的十年中，宽带隙氮化物外延生长的发展取得了显著的进步，取得了积极的成果。 也许在这方面最重要的发展是高亮度蓝光LED的示范和商业化。 这些成就在全世界各实验室引起了广泛的研究活动。 这些活动的主要重点仍然是外延生长。 从文献中可以明显看出，在氮化物生长方面取得的优异进展并没有通过将这些材料转化为器件所需的加工方法的相应进展来实现。 一些处理问题与常规III-V族化合物半导体材料的处理问题完全不同，因此开发用于在氮化物中制造器件的可变处理技术已变得势在必行。 此外，至关重要的是开始培训研究生，他们将构成未来制造这些材料所设想的令人印象深刻的产品所需的人力资源。 因此，我们的提案研究受到GaN和相关化合物生长的持续改进以及开发将这些材料转化为高性能器件和电路所需的加工方法的需求的推动。 拟议的研究的广泛目标是提供新的见解III-V族氮化物的蚀刻，开发新的方法来形成欧姆和肖特基接触的氮化物，并开发高性能的光电集成光接收器工作在紫外波长。 具体目标是：1）开发和理解适合于在氮化物中制造激光器和反射镜的高度各向异性和“无损伤”蚀刻工艺的机理; 2）开发具有低接触电阻的欧姆接触并理解接触形成的机理; 3）研究难熔金属和硅化物在氮化物上的肖特基势垒特性;以及4）制造和表征金属-半导体-金属（MSM）光电探测器和GaN金属-半导体场效应晶体管（MESFFET），并开发它们集成的技术基础。 这项工作将与M博士合作完成。明尼阿波利斯阿帕光学公司的阿西夫·汗将提供这项工作中使用的外延氮化物。 ***

9521671 Adesida Over the last decade, significant improvements in the development of the epitaxial growth of wide bandgap nitrides have yielded positive results. Perhaps the most significant development in this yield has been the demonstration and commercialization of high luminosity blue LEDs. These achievements have engendered a broad spectrum of research activities in various laboratories world wide. The major emphasis of these activities continues to be on epitaxial growth. It is evident from literature that the excellent progress made in the growth of nitrides has not been accomplished by a commensurate progress in the processing methods that are required to turn these materials into devices. Some of the processing problems are sufficiently different from those of conventional III-V compound semiconductor materials, that the development of variable processing techniques for the fabrication of devices in the nitrides has become imperative . Further, it is of cardinal importance to begin training the graduate students who will constitute the human resources needed in the future to manufacture the impressive array of products that are envisaged from these materials. Our proposal research is therefore motivated by the continued improvement in the growth of GaN and related compounds and the need to develop processing methods required to turn these materials into high performance devices and circuits. The broad goals of the proposed research are to provide new insights into the etching of III-V nitrides, to develop new methodologies for the formation of ohmic and Schottky contacts on nitrides , and to develop high performance optoelectronic integrated photoreceivers operating at UV wavelengths. The specific objectives are to 1) develop and understand mechanism for highly anisotropic and "no-damage" etching processing suitable for the fabrication of laser faucets and mirrors in the nitrides; 2) develop ohmic contacts with low contact resistance and to understand the mechanism of contact formation ; 3) investigate Schottky barrier properties of refractory metals and silicides on the nitrides; and 4) fabricate and characterize metal-semiconductor-metal (MSM) photodetectors and GaN metal-semiconductor field-effect transistors (MESFETs) and to develop the technological basis for their integration. The work will be done in collaboration with Dr. M. Asif Khan of APA Optics, Minneapolis, w ho will provide the epitaxial nitrides uses in the work. ***