The Quantum Modulated Transistor: Fabrication and Charac- terization

我们提出了一个实验研究， 纳米尺度的制备和表征 量子干涉效应的结构 砷化镓半导体材料， 应用于新型量子效应器件。 的 拟议研究的主要目标是 用量子调制演示晶体管的作用 在纳米结构中。 具体来说，我们建议制造和表征 一个三端T形设备，叫做量子 调制晶体管（QMT）作为一种工具， 研究实现晶体管动作的可行性 基于限制诱导的量子效应。 的 QMT准一维电子通道 将使用电子束光刻技术制造 和化学辅助离子束蚀刻技术 In Al GaAs/GaAs调制掺杂场效应 晶体管（MODFET）异质结构。 分子- 束外延生长的平面掺杂的，单和双 异质结构MODFET材料表现出 增强的迁移率和电子片密度将 采用 将对QMT进行详尽描述 通过在不同温度下的电流-电压测量 温度降至1 K。 成功实现 高限制纳米结构和QMT 应该可以观察到新的量子 并提供了一种新的超小型设备 用于执行复杂的电子功能。

We propose an experimental investigation on the fabrication and characterization of nanometer-scale structures exhibiting quantum interference effects in gallium arsenide semiconductor materials with applications to novel quantum effect devices. The primary objective of the proposed research is to demonstrate transistor action by quantum modulation in nanostructures. Specifically, we propose to fabricate and characterize a three terminal, T-shaped device called the Quantum Modulated Transistor (QMT) as a vehicle to investigate the feasibility of realizing transistor action based on confinement-induced quantum effects. The quasi-one-dimensional electron channel for the QMT will be fabricated using electron beam lithography and chemically assisted ion beam etching techniques in A1GaAs/GaAs modulation-doped field effect transistor (MODFET) heterostructures. Molecular- beam-epitaxy grown planar-doped, single and double heterostructure MODFET materials exhibiting enhanced mobility and electron sheet density will be used. The QMT will be exhaustively characterized through current-voltage measurements at various temperatures down to 1 K. A successful realization of high confinement nanostructures and the QMT should lead to the observation of novel quantum effects and provide a new class of ultra-small devices for performing complex electronic functions.