The Quantum Modulated Transistor: Fabrication and Charac- terization

我们提出了一项在砷化镓半导体材料中制备和表征具有量子干涉效应的纳米结构的实验研究，并将其应用于新型量子效应器件。这项拟议研究的主要目标是证明晶体管在纳米结构中通过量子调制发挥作用。具体地说，我们建议制作和表征一个称为量子调制晶体管(QMT)的三端子T形器件，作为一种载体来研究基于限制感应量子效应实现晶体管作用的可行性。利用电子束光刻和化学辅助离子束刻蚀技术，在AlGaAs/GaAs调制掺杂场效应晶体管(MODFET)异质结中制作准一维电子沟道。将使用分子束外延生长的平面掺杂、单异质结构和双异质结构的MODFET材料，具有增强的迁移率和电子片密度。QMT将通过在低至1K的不同温度下的电流-电压测量来详尽地表征。成功地实现高限制纳米结构和QMT将导致观察到新的量子效应，并提供一种新的一类用于执行复杂电子功能的超小型设备。

We propose an experimental investigation on the fabrication and characterization of nanometer-scale structures exhibiting quantum interference effects in gallium arsenide semiconductor materials with applications to novel quantum effect devices. The primary objective of the proposed research is to demonstrate transistor action by quantum modulation in nanostructures. Specifically, we propose to fabricate and characterize a three terminal, T-shaped device called the Quantum Modulated Transistor (QMT) as a vehicle to investigate the feasibility of realizing transistor action based on confinement-induced quantum effects. The quasi-one-dimensional electron channel for the QMT will be fabricated using electron beam lithography and chemically assisted ion beam etching techniques in A1GaAs/GaAs modulation-doped field effect transistor (MODFET) heterostructures. Molecular- beam-epitaxy grown planar-doped, single and double heterostructure MODFET materials exhibiting enhanced mobility and electron sheet density will be used. The QMT will be exhaustively characterized through current-voltage measurements at various temperatures down to 1 K. A successful realization of high confinement nanostructures and the QMT should lead to the observation of novel quantum effects and provide a new class of ultra-small devices for performing complex electronic functions.