GOALI: SiGe/Si Modulation-Doped Field-Effect Transistors for Low Power, High Speed Circuit Applications

GOALI：适用于低功耗、高速电路应用的 SiGe/Si 调制掺杂场效应晶体管

• 批准号: 9710418
• 负责人: Ilesanmi Adesida
• 金额: $ 24.03万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-09-15 至 2000-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9710418&HistoricalAwards=false
• 关键词: GOALI; SiGe; Si; Modulation; Doped

9710418 Adesida Over the last decade, significant advances have been made in the epitaxial growth of SiGe/ Si heterostructure material system using molecular beam epitaxy (MBE) and ultra-high vacuum chemical vapor deposition (UHV-CVD). The significant improvements in SiGe/Si material properties have brought to fore a silicon-compatible technology that has the potential to compete favorably with III-V compound semiconductor devices in application-specific designs which require low power consumption and high speed which are needed for cellular telephones and other portable and wireless electronics. The bandgap engineering made possible on silicon by this material system has provided the impetus to study devices such as heterojunction bipolar transistors (HBTs) and modulation-doped field effect transistors (MODFETs) that have heretofore been in the domain of InP and GaAs. Indeed SiGe/Si HBTs have demonstrated excellent high frequency performance with unity current gain cut-off frequencies exceeding 100 GHz. Although, theoretical predictions have shown that SiGe/Si MODFETs and related devices (e.g. MOSFETs) should have comparable or better performance than those obtained for HBTs, experimental work in this area is essentially inchoate. SiGe-based FETs need intensive development in order to evaluate their practical usefulness for advanced microwave and digital circuits. The PI's proposed research is therefore motivated by the continued improvement in the growth of SiGe/Si materials and the need to develop manufacturable processes to turn these materials into high performance conventional p-type and n-type MODFETs. These devices will also make possible the realization of complementary MODFETs. In the proposed research, The University of Illinois (UIUC) and IBM will collaborate to significantly advance the growth and fabrication technologies for SiGe/Si MODFETs needed for low power, high speed microwave and digital circuit applications. The goals of the proposed research are 1) to provide n ew insights into the growth of SiGe/Si with very low density of dislocations; 2) to develop new methodologies for the formation of Schottky and ohmic contacts on SiGe/Si heterostructures; 3) to develop low damage dry etching methodologies for the selective etching of SiGe on Si and vice versa; 4) to study the physics and performance of short gate-length ( 100 nm) p-type, n-type, and complementary MODFETs; and 5) to demonstrate simple microwave and digital circuits using SiGe/Si MODFETs. ***

在过去的十年中，在使用分子束外延（MBE）和超高真空化学气相沉积（UHV-CVD）的SiGe/ Si异质结构材料系统的外延生长方面已经取得了重大进展。SiGe/Si材料性质的显著改进已经带来了硅兼容技术，该硅兼容技术具有在需要蜂窝电话和其他便携式和无线电子设备所需的低功耗和高速度的专用设计中与III-V族化合物半导体器件有利地竞争的潜力。 通过这种材料系统在硅上实现的带隙工程为研究诸如异质结双极晶体管（HBT）和调制掺杂场效应晶体管（MODFFET）之类的器件提供了动力，这些器件迄今为止一直在InP和GaAs的领域中。 实际上，SiGe/Si HBT已经展示了优异的高频性能，单位电流增益截止频率超过100 GHz。 尽管理论预测表明SiGe/Si MODFFET和相关器件（例如MOSFET）应该具有与HBT相当或更好的性能，但该领域的实验工作基本上还处于初期阶段。 SiGe基场效应晶体管需要密集的发展，以评估其先进的微波和数字电路的实用性。 因此，PI提出的研究是由SiGe/Si材料生长的持续改进和开发可制造工艺的需要所推动的，以将这些材料转化为高性能的传统p型和n型MODFFET。 这些器件还将使互补MODFFET的实现成为可能。 在拟议的研究中，伊利诺伊大学（UIUC）和IBM将合作，以显着推进低功率，高速微波和数字电路应用所需的SiGe/Si MODFFET的生长和制造技术。 本研究的目标是：1）为极低位错密度的SiGe/Si生长提供新的见解; 2）为在SiGe/Si异质结构上形成肖特基和欧姆接触提供新的方法; 3）为在Si上选择性刻蚀SiGe和在Si上选择性刻蚀SiGe提供低损伤干法刻蚀方法; 4）研究短栅长（100 nm）p型、n型和互补MODFFET的物理和性能; 5）演示使用SiGe/Si MODFFET的简单微波和数字电路。 ***