Materials and Processes for Nanoelectronics

纳米电子学材料和工艺

• 批准号: 9202294
• 负责人: Ilesanmi Adesida
• 金额: $ 45万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-15 至 1996-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202294&HistoricalAwards=false
• 关键词: Materials; Processes; Nanoelectronics

The goals of the proposed research are to develop key technologies in the fields of epitaxial growth of low-dimensional nanostructures by molecular beam epitaxy and materials processing to make possible the fabrication and characterization of functional nanodevices with dimensions smaller than existing devices. It is expected that this dimensionality will lead to the observation of new quantum and ballistic effects which will in turn lead to novel devices with higher performance and operation above liquid nitrogen temperatures. It is our vision that the completion of this research should lead to 1) new insight into innovative growth and regrowth methods, 2) new insight into characterizing ultra-small heterolayers and interfaces 3) more advanced nanofabrication technologies, 4) an understanding of new physical effects in nanoscale structures and devices, 5) improved and innovative nanodevices.

拟议研究的目标是 发展关键技术， 低维外延生长 通过分子束外延的纳米结构， 材料加工，使之成为可能， 功能材料的制备和表征 尺寸小于 现有设备。 预计这一 维度将导致观察到 新的量子和弹道效应， 从而导致具有更高 液上性能和操作 氮气温度。 我们的愿景是， 完成这项研究应导致1） 对创新增长和再增长的新见解 方法，2）对表征的新见解 超小异质层和界面3）更多 先进的纳米纤维技术，4） 了解新的物理效应， 纳米结构和器件，5）改进的 和创新的纳米器件。