A Look at Temperature Dependent Parameters for Digital Circuit Design Considerations using SiC Mosfet Technology

这个研究项目涉及用SiC制造的表面和埋沟道MOSFET器件的特性- SiC是一种宽带隙半导体，在高温功率和控制电子方面显示出前景。该程序建议检查测试模式，以提取表面通道SiC器件和离子注入SiC埋地通道器件的器件建模参数。这些建模参数将在修改的仿真程序中使用，以模拟适合高温操作的模拟和数字电路。该计划强调在SiC中使用增强耗尽（ED）技术，并在扩展的温度范围内提取建模参数。＊＊＊

9521901 Kornegay This research program involves the characterization of surface and buried channel MOSFET devices fabricated in SiC - a wide bandgap semiconductor which shows promise for high temperature power and control electronics. The program proposes to examine test patterns to extract device modeling parameters for surface channel SiC devices and ion-implanted SiC buried channel devices. These modeling parameters will be used in modified simulation programs to model analog and digital circuits suitable for high-temperature operation. The program emphasizes the use of enhancement-depletion (ED) technology in SiC and extraction of modeling parameters over an extended temperature range. ***