A Look at Temperature Dependent Parameters for Digital Circuit Design Considerations using SiC Mosfet Technology

使用 SiC Mosfet 技术研究数字电路设计考虑因素的温度相关参数

• 批准号: 9521901
• 负责人: Kevin Kornegay
• 金额: $ 1.8万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-06-15 至 1997-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9521901&HistoricalAwards=false
• 关键词: Look; Temperature; Dependent; Parameters; Digital

9521901 Kornegay This research program involves the characterization of surface and buried channel MOSFET devices fabricated in SiC - a wide bandgap semiconductor which shows promise for high temperature power and control electronics. The program proposes to examine test patterns to extract device modeling parameters for surface channel SiC devices and ion-implanted SiC buried channel devices. These modeling parameters will be used in modified simulation programs to model analog and digital circuits suitable for high-temperature operation. The program emphasizes the use of enhancement-depletion (ED) technology in SiC and extraction of modeling parameters over an extended temperature range. ***

9521901 Kornegay该研究计划涉及表面和埋沟MOSFET器件在SiC制造的特性-一个宽带隙半导体显示高温功率和控制电子的承诺。 该计划建议检查测试图案，以提取表面沟道SiC器件和离子注入SiC掩埋沟道器件的器件建模参数。 这些建模参数将用于修改后的模拟程序，模拟和数字电路适合高温操作。 该计划强调使用增强耗尽（艾德）技术在SiC和提取的建模参数在一个扩展的温度范围。 ***