Internal Interfaces in Semiconductors

半导体内部接口

• 批准号: 9522253
• 负责人: C Carter
• 金额: $ 30万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-15 至 1999-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9522253&HistoricalAwards=false
• 关键词: Internal; Interfaces; Semiconductors

9522253 Carter The goals of this research project are to gain new understanding of microscopic details, particularly chemical bonding and defects, at heterostructure interfaces and of dislocations in the lattice of compound semiconductors. The research will emphasize studies of anti-site bonding which is thought to be an intrinsic factor in the core of dislocations and of nearly all grain boundaries in these materials. Correlation between observed and calculated defect structures will be made through computer image simulation. The electrical properties of interfaces will be investigated by high-resolution cathodoluminescence and electron-beam induced current techniques. Additionally, the mechanical behavior of individual interfaces will be studied by controlled deformation experiments. The project will utilize samples specially prepared where interfaces and defects have been introduced in a controlled manner so that improved understanding of the defects can be obtained, and also understanding of the ways new information can be used to both exploit defect behavior or to develop strategies to control, avoid or eliminate the defects. %%% This research project will apply state-of-the-art materials science analysis and computer simulation techniques to obtain basic understanding of defects at critical interfaces in advanced structures of compound semiconductor materials used in lasers and electronic devices. This research will contribute to improve fundamental understanding of interface chemistry and physical properties as well as other defects which limit the applications or lifetime of semiconductor devices. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. ***

9522253 Carter本研究项目的目标是获得对微观细节的新理解，特别是异质结构界面处的化学键合和缺陷以及化合物半导体晶格中的位错。 这项研究将强调反位键合的研究，反位键合被认为是这些材料中位错核心和几乎所有晶界的内在因素。 通过计算机图像模拟，将观察到的缺陷结构与计算出的缺陷结构相关联。 界面的电性能将通过高分辨率阴极射线发光和电子束感应电流技术进行研究。 此外，将通过受控变形实验研究各个界面的力学行为。 该项目将使用专门制备的样品，其中界面和缺陷以受控方式引入，以便更好地了解缺陷，并了解新信息可用于开发缺陷行为或制定控制、避免或消除缺陷的策略的方式。本研究计划将应用最先进的材料科学分析和计算机模拟技术，以获得对激光器和电子器件中使用的化合物半导体材料的先进结构中关键界面缺陷的基本了解。 这项研究将有助于提高对界面化学和物理特性以及限制半导体器件应用或寿命的其他缺陷的基本理解。 该计划的一个重要特点是在一个基本的和技术上重要的领域培养研究生和本科生。***