Study of Growth Front Roughening Using Diffraction and Imaging Techniques
Study of Growth Front Roughening Using Diffraction and Imaging Techniques
批准号:
9531482
负责人:
Gwo-Ching Wang
金额:
$30.99万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-07-01 至 1999-09-30
中文摘要
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英文摘要
w:\awards\awards96\*.doc 9531482 Wang This research will support the investigation of the formation of interface roughness during growth/etching of surfaces under conditions far from equilibrium. Interface roughness is a central issue in thin film deposition and directly controls many physical and chemical properties of the films. The goals are to grow amorphous films and test unambiguously the validity of various proposed mechanisms based on noise induced growth front roughening. Differentiation of various roughness mechanisms in a molecular beam epitaxy (MBE) growth front will be carried out as will the development of real time diffraction techniques, especially light scattering for quantitative measurement of rough surface growth in a hostile deposition environment. %%% This research will support the investigation of the formation of interface roughness during growth/etching of surfaces under conditions far from equilibrium. Interface roughness is a central issue in thin film deposition and directly controls many physical and chemical properties of the films. The goals are to grow amorphous films and test unambiguously the validity of various proposed mechanisms based on noise induced growth front roughening. Various growth techniques will be used and a light scattering technique for the in situ monitoring of rough surface growth will be developed. ***
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REU Site in Physics at Rensselaer
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批准号:0850934
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项目类别:Standard Grant
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资助金额:$32.0万
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财政年份:2009
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负责人:Gwo-Ching Wang
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依托单位:
Hydrogenation/dehydrogenation in novel Pd-coated Mg nanoblades:
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批准号:0853562
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项目类别:Standard Grant
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资助金额:$32.5万
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财政年份:2009
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负责人:Gwo-Ching Wang
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依托单位:
Hands-On Physics Outside the Classroom
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批准号:0633083
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2007
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负责人:Gwo-Ching Wang
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依托单位:
REU Site in Physics at Rensselaer
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批准号:0453231
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Gwo-Ching Wang
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依托单位:
IGERT: Terahertz Science and Technology - A Studio-Based Approach
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批准号:0333314
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项目类别:Continuing Grant
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资助金额:$386.44万
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财政年份:2003
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负责人:Gwo-Ching Wang
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依托单位:
NER: Exploring the Mechanical and Thermoelectric Properties of Composite Nano-Rods and Nano-Springs
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批准号:0210587
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2002
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负责人:Gwo-Ching Wang
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依托单位:
REU In Physics at Rensselaer
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批准号:0097226
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项目类别:Continuing Grant
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资助金额:$23.78万
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财政年份:2001
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负责人:Gwo-Ching Wang
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依托单位:
Study of Growth/Etch Front Roughening at Far-From-Equilibrium
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批准号:9971265
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项目类别:Continuing Grant
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资助金额:$27.0万
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财政年份:1999
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负责人:Gwo-Ching Wang
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依托单位:
Research Experiences for Undergraduates in Physics at Rensselaer
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批准号:9731604
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项目类别:Continuing Grant
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资助金额:$20.92万
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财政年份:1998
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负责人:Gwo-Ching Wang
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依托单位:
In Situ Quantitative Measurement of Structural and Magnetic Properties of Nano-Structured Cobalt Films and Wires
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批准号:9701488
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项目类别:Continuing Grant
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资助金额:$12.6万
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财政年份:1997
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负责人:Gwo-Ching Wang
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依托单位:
Nanometer Scale Characterizaton in Undergraduate Labs Using a Lateral Force Microscope
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批准号:9650897
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项目类别:Standard Grant
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资助金额:$2.64万
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财政年份:1996
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负责人:Gwo-Ching Wang
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依托单位:
Research Experiences for Undergraduates in Physics
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批准号:9424158
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项目类别:Continuing Grant
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资助金额:$19.96万
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财政年份:1995
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负责人:Gwo-Ching Wang
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依托单位:
Experimental Study of Dynamic Scaling in Epitaxial Growth
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批准号:9213023
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项目类别:Continuing Grant
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资助金额:$24.0万
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财政年份:1993
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负责人:Gwo-Ching Wang
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依托单位:
Research Experiences for Undergraduates (Physics)
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批准号:9200450
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项目类别:Continuing Grant
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资助金额:$18.14万
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财政年份:1992
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负责人:Gwo-Ching Wang
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依托单位:
High Resolution Low Energy Electron Diffraction Studies of Surface and Overlayer Ordering
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批准号:8906003
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项目类别:Continuing Grant
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资助金额:$19.8万
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财政年份:1989
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负责人:Gwo-Ching Wang
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依托单位:
Research Opportunities for Women: Ordering in Surface Melting and Overlayers (Materials Research)
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批准号:8607369
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项目类别:Continuing Grant
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资助金额:$21.7万
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财政年份:1986
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负责人:Gwo-Ching Wang
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依托单位:
国内基金
海外基金
基于FP-Growth关联分析算法的重症患者抗菌药物精准决策模型的构建和实证研究
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批准号:2024Y9049
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项目类别:省市级项目
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资助金额:100.0万元
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批准年份:2024
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负责人:阮君山
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依托单位:
Research on the Rapid Growth Mechanism of KDP Crystal
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批准号:10774081
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项目类别:面上项目
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资助金额:45.0万元
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批准年份:2007
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负责人:滕冰
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依托单位: