Spatially Resolved Electronic Spectroscopy of Semiconductor Heterostructures

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9615647 Feenstra This project addresses fundamental research issues of atomic geometry and electronic band structure of II-VI and III-nitride materials configured as heterostructures with GaAs. The approach utilizes detailed scanning tunneling microscopy (STM) measurements along with computer simulation to model strain, strain relaxation, and electronic band structure. By coupling strain and critical points of the electronic bands, the PI strives for correlation and interpretation of STM images in terms of geometric configurations and electronic properties with the capability to differentiate between alloy constituents and band offsets of adjoining heterostructure layers. %%% The project addresses forefront research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***