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Nucleation and Growth of Epitaxial Graphene on Silicon Carbide

Nucleation and Growth of Epitaxial Graphene on Silicon Carbide
碳化硅上外延石墨烯的成核与生长
批准号:
0856240
负责人:
Randall Feenstra
金额:
$37.64万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-06-15 至 2012-08-31

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中文摘要
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英文摘要
Technical. This project addresses synthesis/processing of graphene; a range of studies involving variation in growth parameters and detailed characterization of film properties will be conducted to identify and understand growth mechanisms. Initially, reactive gases will be introduced as a background environment during annealing. Hydrogen is expected to perform some etching (perhaps of defects) during the annealing, whereas oxygen may act to getter impurities and/or assist in the removal of silicon from the surface. Additionally, carbon-containing gases such as propylene will be used to assess their potential for deposition of graphene on SiC. The resulting films will be characterized by atomic force microscopy, low-energy electron diffraction, and Auger electron spectroscopy, with optical and electrical characterization to be performed by collaborating researchers at Sarnoff Corp., Argonne National Lab, MIT Lincoln Labs, and Notre Dame University. Complementary studies on the detailed structure of the graphene/SiC interface will be performed by scanning tunneling microscopy and scanning tunneling spectroscopy. Modeling of those results using first-principles theory will be performed by collaborators at Ohio University. Non-Technical. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having technological relevance. Societal benefits of the proposed research are potentially very large since graphene is a strong candidate material for extending electronics capabilities beyond the limits of silicon technology. The project will also provide interdisciplinary training to graduate students in the nanotechnology field. Additionally, the PI presents annual lectures to middle and high school students on Nanotechnology, as well as teaching a course on Nanoscience and Nanotechnology. The graphene-related research of this proposal will be used to enhance the content of these lectures, providing students with an example of a current research topic in Nanotechnology. The course includes a laboratory component, and development of a laboratory exercise dealing with graphene exfoliation and observation is planned.
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Spatially-Resolved Electronic and Magnetic Structure of 2D Van der Waals Materials and Heterostructures
  • 批准号:
    1809145
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.0万
  • 财政年份:
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  • 批准号:
    1205275
  • 项目类别:
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Nanoscale Properties of Wide-Band Gap Semiconductor Surfaces
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  • 负责人:
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