Control of Epitaxial Graphene Layers on Silicon Carbide

碳化硅上外延石墨烯层的控制

• 批准号: 1205275
• 负责人: Randall Feenstra
• 金额: $ 26.58万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-06-15 至 2015-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1205275&HistoricalAwards=false
• 关键词: Control; Epitaxial; Graphene; Layers; Silicon

Technical Description: The research performed in this project aims to understand and improve the formation of graphene on the (000-1) surface of SiC (the C-face). Prior work has identified a new interface structure for graphene on the C-face, occurring when the graphene is formed in a low-pressure disilane environment. Further research of this graphene formation mechanism is performed in this project. Decoupling of the C-face interface layer from the SiC is also studied, using hydrogen or oxygen gases. The electronic properties of the graphene are characterized, in collaborative studies with other scientists. Insulating layers such as boron nitride are epitaxially deposited on the graphene, as a first step towards the formation of graphene-insulator-graphene junction. Methods are explored for further deposition of a second layer of graphene on the boron nitride.Non-technical Description: Graphene, a two-dimensional monolayer of carbon, has been intensively studied for the past decade because of the unique transport properties of electrons in the material. For large-area production of graphene (as needed for electronic devices and circuits), a leading method is the formation on silicon carbide (SiC). This research project focuses on formation mechanisms for graphene on SiC, particularly on its C-face. The project also provides broad multi-disciplinary training to graduate students in the nanotechnology field. Additionally, the PI presents annual lectures to middle and high school students on nanotechnology, as well as teaching an undergraduate course on Nanoscience and Nanotechnology. The graphene-related research of this project is used to enhance the content of these lectures, providing the students with an apt example of a current topic in nanoscience and nanotechnology.

技术描述：本项目的研究旨在了解和改进碳化硅（c面）（000-1）表面石墨烯的形成。先前的工作已经确定了石墨烯在c面上的一种新的界面结构，这种结构发生在石墨烯在低压二硅烷环境中形成时。本项目对石墨烯形成机理进行了进一步的研究。用氢气或氧气对c面界面层与碳化硅的去耦进行了研究。在与其他科学家的合作研究中，石墨烯的电子特性被表征。绝缘层如氮化硼外延沉积在石墨烯上，作为形成石墨烯-绝缘体-石墨烯结的第一步。探索了在氮化硼上进一步沉积第二层石墨烯的方法。非技术描述：石墨烯是一种二维单层碳，由于材料中电子的独特传输特性，在过去的十年中得到了广泛的研究。对于大面积生产石墨烯（电子器件和电路所需要的），一种领先的方法是在碳化硅（SiC）上形成。本研究项目的重点是石墨烯在SiC上的形成机制，特别是在其c面。该项目还为纳米技术领域的研究生提供广泛的多学科培训。此外，PI每年向中学生和高中生讲授纳米技术，并教授纳米科学和纳米技术的本科课程。这个项目中与石墨烯相关的研究被用来加强这些讲座的内容，为学生们提供了一个纳米科学和纳米技术当前主题的恰当例子。