CAREER: High-Performance Semiconductor Photodetectors

半导体光电子器件，如激光二极管、发光二极管、光波导、电光调制器、光电探测器等，由于其方便、高效和与现代电子学的天然兼容性，在光通信和控制系统中有着重要的应用。利用低温沉积技术研究高性能半导体光电探测器是PI的职业发展计划。PI目前的研究重点是LT金属薄膜的微观结构和电学性能的研究。与常规室温沉积薄膜相比，低温沉积金属薄膜最重要的特点是：(1)肖特基势垒高度显著提高；(2)极薄时（小于100a）电阻率大大降低；这两者都是许多光电器件的优良品质，例如金属半导体-金属（MSM）光电二极管，这是高速光电探测器的最佳选择之一。提出的研究计划是：(1)探索几种新型半导体材料（包括常用于光电探测器的InGaAs、AlGaAs和SiGe）上的LT薄膜的电特性；(2)将该技术应用于器件制造；(3)优化装置设计；(4)进行器件制造和表征。预计低温金属薄膜的应用将显著提高器件的性能。这种高性能光电探测器将对光电集成电路（OEIC）技术产生重要影响。PI的教育计划的目标是为当今的工业和学术需求培养富有成效的工程师，并提供新开发的技术来帮助学生的专业发展。在PI的研究项目开展的同时，PI还在北伊利诺伊大学电气工程系开设了两门关于光电器件以及半导体材料和器件特性的高级选修课和研究生课程。这些课程的创新将集中在这两门课程的实验室组件的开发上，这将在PI的研究计划和教育目标之间提供强大的协同作用。＊＊＊

9624882 He Semiconductor optoelectronic devices, such as laser diodes, light emitting diodes, optical waveguides, electrooptic modulators, and photodetectors, have important applications in optical communication and control systems because of their convenience, efficiency, and natural compatibility with modern electronics. Research on high performance semiconductor photodetectors using low temperature (LT) deposition technology is proposed for the PI's career development plan. The PI's current research focuses on the study of the microstructural and electrical properties of LT thin metal films. The most important characteristics of the low-temperature deposited thin metal films, compared with conventional room temperature deposited films, are: (1) tremendously increased Schottky barrier height; and (2) greatly lowered resistivity when they are very thin (less than 100 A); both of which are superior qualities for many optoelectronic devices, such as a metal semiconductor-metal (MSM) photodiode, which is one of the best choices for high-speed photodetectors. The proposed research plan is to (1) explore the electrical characteristics of LT thin films on several new semiconductor materials, including InGaAs, AlGaAs and SiGe, which are often used for photodetectors; (2) implement this technique to device fabrication; (3) optimize device design; and (4) carry out the device fabrication and characterization. It is anticipated that the application of the low-temperature thin metal films will result in a significant enhancement of device performance. Such a high-performance photodetector will have an important impact in optoelectronic integrated circuit (OEIC) technology. The goal of the PI's education plan is to educate productive engineers for today's industrial and academic needs and to provide newly developed technology to aid students' professional development. Concurrently with the PI's research program, two senior elective and graduate level courses in optoelectro nic devices, as well as semiconductor material and device characterization are being developed by the PI in the Department of Electrical Engineering at Northern Illinois University. Innovation in these courses will focus on the development of laboratory components for both courses, which will provide a strong synergy between the PI's research program and education goals. ***