Low Temperature Deposition of Thin Metal Films for Solar Cell Applications
Low Temperature Deposition of Thin Metal Films for Solar Cell Applications
批准号:
9423716
负责人:
Lili He
金额:
$2.8万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-04-01 至 1996-12-31
中文摘要
9423716 He薄膜在电子器件和电路中的应用是当前非常感兴趣的课题,将被研究。本研究的目的是通过低温沉积获得一种可靠的、低阻的、薄的金属薄膜,以获得较低的电阻性能。计划工作如下:(1)制备包括Au、Al、Ag、Pd、Ni和Cr在内的各种常规接触金属的均匀、电性和结构稳定的LT薄膜;(2)评估电阻率、TCR及其与薄膜厚度的关系,以及薄膜制备条件、沉积速度和衬底温度。进行稳定性测试;以及(3)确定LT薄膜的物理和化学结构以及导电机制,将微结构特性与电学数据关联起来。该项目还将对LT薄膜的电学和结构特性有一个更好的基本了解。***
英文摘要
9423716 He Thin metal film applications in electronic devices and circuits are topics of great current interest and will be studied. The goal of this research is to obtain a reliable, low-resistivity, thin metal film by LT deposition, to attain lower resistance performance. The planning activities are as follows: (1) Prepare uniform, electrical and structural stable LT thin films of various conventional contact metals including : Au, Al, Ag, Pd, Ni and Cr; (2) Evaluate the resistivity, TCR and their relation to the film thickness as well as the film preparation conditions, deposition rate and substrate temperature. Perform the stability test; and (3) Identify the physical and chemical structure, as well as the conduction mechanism of the LT thin films, correlating microstructural properties with electrical data. This project will also provide a better basic understanding of the electrical and structural characteristics of the LT thin films. ***
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CAREER: High-Performance Semiconductor Photodetectors
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批准号:0096190
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:1999
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负责人:Lili He
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依托单位:
CAREER: High-Performance Semiconductor Photodetectors
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批准号:9624882
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:1996
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负责人:Lili He
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依托单位:
海外基金