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IUCRC Phase I: University of Illinois at Urbana-Champaign (UIUC): Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP)

IUCRC Phase I: University of Illinois at Urbana-Champaign (UIUC): Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP)
IUCRC 第一阶段:伊利诺伊大学厄巴纳-香槟分校 (UIUC):具有加速性能的先进半导体芯片中心 (ASAP)
批准号:
2231625
负责人:
Shaloo Rakheja
金额:
$75.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2023
资助国家:
美国
项目状态:
未结题
起止时间:
2023-01-01 至 2027-12-31

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中文摘要
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英文摘要
This Phase I award supports the Industry University Cooperative Research Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP) at the University of Illinois - Urbana-Champaign. Integrated circuits or “chips”, containing billions of transistors within the size of a fingernail, have had a profound impact on human lives, and enabled many fundamental scientific discoveries. However, in state-of-the-art microprocessors and associated computing machines, interconnects or wires that transport data between different components start to dominate the overall power consumption and performance, which has become a critical bottleneck for future semiconductor technologies. In alliance with industry members, the Center will develop breakthrough solutions that alleviate interconnect challenges and improve the energy efficiency of next-generation information-processing systems. The Center will address the critical national need for US technology supremacy in future microelectronics. In addition to technology development, the center will foster unique training opportunities for a diverse workforce with technical competence, socially responsible leadership, and entrepreneurship. The Center has a rich portfolio of outreach activities, including working with under-represented and low-income K-12 students, training students from two-year institutions of higher education (community colleges/technical colleges), and developing a women-in-microelectronics program. The Center will work closely with UIUC’s Institute for Inclusion, Diversity, Equity, and Access to recruit, educate, and retain diverse talents and empower them to become future leaders in US-based microelectronics and other related industries.The Center’s research is structured into three tightly integrated themes including materials discovery for electrical and optical interconnects, heterogeneous 3D integration, and highly energy-efficient circuits and architectures. The materials-to-architectures co-design approach will allow the Center to address the fundamental technological roadblocks toward enabling future microprocessors with higher performance but lower energy consumption. By integrating disparate components on silicon, such as interconnects based on quantum materials, nanodielectrics, magnetic and ferroelectric memory, nano-photonics, and III-V elements, the Center seeks to reduce the energy-delay cost of data communication hundred-fold in chips adopting novel processing-in-memory architectures. Center faculty members have cross-disciplinary expertise in materials science, nanoscale electronic and photonic device fabrication and characterization, computational modeling, and circuit and architecture design. By focusing on technologies that are mutually beneficial for digital and RF applications, the Center will collaboratively address the research needs of its industrial members representing different microelectronics sectors and thus different research priorities. The Center will engage with semiconductor foundries, chip manufacturers, small startups, DOE national labs, and DoD labs and collaboratively seek to make a sustained and meaningful impact on the next-generation information-processing systems.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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CAREER: A multi-scale and hierarchical computational framework to model III-nitride devices operating in the near-terahertz regime
2022 Device Research Conference
  • 批准号:
    2227544
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.0万
  • 财政年份:
    2022
  • 负责人:
    Shaloo Rakheja
  • 依托单位:
79th Device Research Conference. To Be Held Virtually June 20-23, 2021.
  • 批准号:
    2133323
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.0万
  • 财政年份:
    2021
  • 负责人:
    Shaloo Rakheja
  • 依托单位:
IUCRC Planning Grant University of Illinois: Center for Aggressive Scaling by Advanced Processes for Electronics and Photonics (ASAP)
国内基金
海外基金
Baryogenesis, Dark Matter and Nanohertz Gravitational Waves from a Dark Supercooled Phase Transition
  • 批准号:
    24ZR1429700
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    YUICHIRO NAKAI
  • 依托单位:
ATLAS实验探测器Phase 2升级
  • 批准号:
    11961141014
  • 项目类别:
    国际(地区)合作与交流项目
  • 资助金额:
    3350万元
  • 批准年份:
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  • 负责人:
    刘衍文
  • 依托单位:
地幔含水相Phase E的温度压力稳定区域与晶体结构研究
  • 批准号:
    41802035
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    12.0万元
  • 批准年份:
    2018
  • 负责人:
    张里
  • 依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究