SBIR Phase II: Real Time Sputter Depth Measurement for In Situ Surface Microanalysis

邮编：9627857 这个小型企业创新研究第二阶段项目解决了在分析深度剖面期间的任何给定时刻都要分析样品的地下水平的问题。用二次离子质谱法（西姆斯）和俄歇电子光谱法对固体表面的元素组成进行深度分布分析需要从表面离子束溅射材料以形成深度增加的坑。只有在测量完成后，才能通过轮廓测量法测量弹坑深度，计算溅射速率的平均值，并完成成分与深度的校准。不幸的是，溅射速率在不同的材料中可以有很大的差异，这会改变界面的表观位置。溅射速率也与离子产率有关，离子产率影响用于定量西姆斯中杂质数据的相对灵敏度因子。 随着工业对空间和成分精度的要求越来越高，以及对更快的分析周转的要求越来越高，原位和真实的实时测量弹坑深度和溅射速率非常重要。我们在第一阶段演示了一种可以进行这种测量的干涉测量技术。在第二阶段，我们建议使用这种方法来创建一个新的工具，适用于现有的分析仪器，将提供动态深度测量，在分析过程中，分辨率接近一纳米。 我们将建立一个原型仪器，适用于分析西姆斯光谱仪，将监测溅射深度在一个单一的点在深度剖面分析。它的性能和功能将被描述，缺点将被解决。将进行实验，以探索其行为与不同的样本类型，和多点扩展的技术将被检查。 立即应用存在的纳入商业二次离子质谱仪和俄歇微探针，无论是在新的仪器和改装到大型安装基地的工具。

DMI-9627857 Colvard This Small Business Innovation Research Phase II project addresses the problem of knowing what subsurface level of a sample is being analyzed at any given moment during an analytical depth profile. Depth profile analysis of elemental composition at solid surfaces with secondary ion mass spectrometry (SIMS) and Auger electron spectrometry requires ion beam sputtering of material from the surface to form a crater of increasing depth. Only after the measurement is completed can the crater depth be measured by profilometry, the sputter rate averaged, and the calibration of composition versus depth completed. Unfortunately, sputter rates can vary widely in different materials, which shifts the apparent position of interfaces. Sputter rate has also been linked to ion yield, which affects the relative sensitivity factors used to quantify impurity data in SIMS. As industrial demands increase for higher levels of spatial and compositional accuracy, and for faster analytical turn around, it is important to measure crater depth and sputter rate in situ and in real time. We demonstrated in Phase I an interferometric technique that can perform this measurement. In Phase II we propose to use this approach to create a new tool, adaptable to existing analytical instruments, that will provide dynamic depth measurements, during an analysis, with a resolution approaching one nanometer. We will build a prototype instrument, adapted to an analytical SIMS spectrometer, that will monitor sputter depths at a single point during depth profile analyses. Its performance and functionality will be characterized, and shortcomings will be addressed. Experiments will be conducted to explore its behavior with different sample types, and multi-point extensions to the technique will be examined. Immediate applications exist for incorporation of this tool into commercial secondary ion mass spectrometers and Auger microprobes, both in new instruments and as retrofits into the large installed base.