Arsenic Doping of Zinc Selenide via Neutron Transmutation of Selenium

通过硒的中子嬗变对硒化锌进行砷掺杂

• 批准号: 9633107
• 负责人: Jack Boone
• 金额: $ 34.13万
• 依托单位: Missouri University of Science and Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-08-01 至 2000-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9633107&HistoricalAwards=false
• 关键词: Arsenic; Doping; Zinc; Selenide; via

9633107 Boone This project address a key issue, p-type doping in II-VI semiconductors, utilizing nuclear reactions and homoepitaxy to prepare thin film crystalline ZnSe with As dopant atoms 'trapped' at Se lattice sites. The approach is based on growth of ZnSe using isotopically enriched 74Se exposed to thermal neutrons before growth to allow the doping process to be decoupled from crystal growth, and other processes which can lead to compensation effects. The idea is that most of the resulting 75Se will decay to As after growth is completed, and ZnSe will have been synthesized by a process 'guaranteeing' substitutional As doping. The aim of the research is to provide unique material to gain fundamental insight into fundamental doping mechanisms in II-VI materials. %%% The project is multidisciplinary combining fundamental materials physics and materials processing studies with advanced characterization tools and analysis methods to address basic issues in a topical area of high scientific value and potential technological benefits. The research will contribute basic materials science knowledge at a fundamental level important to several aspects of advanced electronic/photonic device fabrication and operation. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

这个项目解决了一个关键问题，在II-VI半导体中掺杂p型，利用核反应和同外延制备薄膜晶体ZnSe，其中As掺杂原子被“捕获”在Se晶格位置。该方法是基于在生长前将同位素富集的74Se暴露于热中子中生长ZnSe，从而使掺杂过程与晶体生长和其他可能导致补偿效应的过程解耦。这个想法是，大部分得到的75Se将在生长完成后衰变成As，而ZnSe将通过“保证”替代As掺杂的过程合成。该研究的目的是提供独特的材料，以获得对II-VI材料中基本掺杂机制的基本见解。该项目是多学科结合基础材料物理学和材料加工研究与先进的表征工具和分析方法，以解决高科学价值和潜在技术效益的主题领域的基本问题。该研究将为先进的电子/光子器件的制造和操作提供重要的基础材料科学知识。从该研究项目中获得的知识和理解有望通过提供基本的理解和设计和生产改进材料的基础，以一般方式改善先进设备的性能。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊