Arsenic Doping of Zinc Selenide via Neutron Transmutation of Selenium
Arsenic Doping of Zinc Selenide via Neutron Transmutation of Selenium
批准号:
9633107
负责人:
Jack Boone
金额:
$34.13万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-08-01 至 2000-07-31
中文摘要
9633107 Boone该项目解决了一个关键问题,即II-VI族半导体中的p型掺杂,利用核反应和同质外延来制备薄膜晶体ZnSe,其中As掺杂剂原子被“捕获”在Se晶格位置。 该方法是基于使用同位素富集的74 Se的ZnSe的生长,在生长之前暴露于热中子,以允许掺杂过程与晶体生长以及可以导致补偿效应的其他过程解耦。这个想法是,大部分产生的75硒将衰减到砷后,生长完成,和硒化锌将已合成的过程“保证”替代砷掺杂。该研究的目的是提供独特的材料,以获得对II-VI材料中基本掺杂机制的基本见解。该项目是多学科的,将基础材料物理和材料加工研究与先进的表征工具和分析方法相结合,以解决具有高科学价值和潜在技术效益的热门领域的基本问题。 这项研究将有助于在先进的电子/光子器件制造和操作的几个方面的重要基础水平的基本材料科学知识。 从该研究项目中获得的知识和理解预计将通过提供基本理解和设计和生产改进材料的基础,为提高先进设备的性能做出贡献。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***
英文摘要
9633107 Boone This project address a key issue, p-type doping in II-VI semiconductors, utilizing nuclear reactions and homoepitaxy to prepare thin film crystalline ZnSe with As dopant atoms 'trapped' at Se lattice sites. The approach is based on growth of ZnSe using isotopically enriched 74Se exposed to thermal neutrons before growth to allow the doping process to be decoupled from crystal growth, and other processes which can lead to compensation effects. The idea is that most of the resulting 75Se will decay to As after growth is completed, and ZnSe will have been synthesized by a process 'guaranteeing' substitutional As doping. The aim of the research is to provide unique material to gain fundamental insight into fundamental doping mechanisms in II-VI materials. %%% The project is multidisciplinary combining fundamental materials physics and materials processing studies with advanced characterization tools and analysis methods to address basic issues in a topical area of high scientific value and potential technological benefits. The research will contribute basic materials science knowledge at a fundamental level important to several aspects of advanced electronic/photonic device fabrication and operation. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***
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