SBIR Phase I: Thermal Atomic Nitrogen/Hydrogen Source for Molecular Beam Epitaxy Applications

SBIR 第一阶段：用于分子束外延应用的热原子氮/氢源

• 批准号: 9660948
• 负责人: James Greer
• 金额: $ 7.5万
• 依托单位: PVD Products, Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 1997-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9660948&HistoricalAwards=false
• 关键词: SBIR; Phase; Thermal; Atomic; Nitrogen

*** 96660948 Greer This Phase I Small Business Innovation Research project will investigate the efficacy of a thermal source of atomic nitrogen and hydrogen for molecular beam epitaxy (MBE) applications. Both of these species are useful in the deposition of many electronic, optical, and tribological materials. Presently plasma sources produce about 1% N1 or H1, but also yield an equal number of energetic ions which can be undesirable during the growth of materials like GaN by MBE. Furthermore, the ability to monitor the atomic gas flux would allow closed-loop feedback control greatly improving the deposition process. The project will characterize the efficiency of our thermal source for producing both N1 and H1 and this source should yield up to 10 % N1 and over 60 % H1 with atomic fluxes at the substrate surface in excess of 1 and 5 x 1015 atoms/cm2/sec, respectively. We will incorporate this source into an MBE system to grow and then characterize high quality GaN films. Finally, we plan to conduct a study of potential techniques which might be used as an in-situ monitor for N1. Our thermal N1/H1 source has many advantages over conventional plasma sources including a higher atomic flux, lower contamination, and does not produce ions. A high flux thermal N1/H1 source will increase the growth rates of high quality MBE GaN material by about an order of magnitude. GaN will be used in a variety electro-optic applications including blue lasers and LEDs and will create many new opportunities itself. Furthermore, it is also expected that this source will be quickly incorporated into many other physical vapor deposition processes for the growth of cBN, C3N4, and/or low temperature diamond materials, to name a few. Each of these materials themselves may enable new or emerging technologies and generate opportunities for many US companies. ***

*** 96660948 Greer 这一第一阶段小型企业创新研究项目将研究原子氮和氢热源在分子束外延 (MBE) 应用中的功效。这两种物质均可用于许多电子、光学和摩擦材料的沉积。目前，等离子体源产生约 1% 的 N1 或 H1，但也会产生相同数量的高能离子，这在通过 MBE 生长 GaN 等材料期间可能是不需要的。此外，监测原子气体通量的能力将允许闭环反馈控制极大地改善沉积过程。该项目将表征我们的热源产生 N1 和 H1 的效率，该热源应产生高达 10% 的 N1 和超过 60% 的 H1，且基板表面的原子通量分别超过 1 和 5 x 1015 原子/cm2/秒。我们将将此源合并到 MBE 系统中，以生长高质量 GaN 薄膜并对其进行表征。最后，我们计划对可用作 N1 现场监测的潜在技术进行研究。我们的热 N1/H1 源比传统等离子体源具有许多优势，包括更高的原子通量、更低的污染，并且不产生离子。 高通量热 N1/H1 源将使高质量 MBE GaN 材料的生长速率提高约一个数量级。 GaN 将用于各种电光应用，包括蓝色激光器和 LED，并且本身将创造许多新的机会。 此外，还预计该源将快速并入许多其他物理气相沉积工艺中，用于生长 cBN、C3N4 和/或低温金刚石材料等。 这些材料本身都可以实现新技术或新兴技术，并为许多美国公司创造机会。 ***