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SBIR Phase I: Diffusion Resistant, High Purity Wafer Carriers

SBIR Phase I: Diffusion Resistant, High Purity Wafer Carriers
SBIR 第一阶段:抗扩散、高纯度晶圆载体
批准号:
9661246
负责人:
Lori Bracamonte
金额:
$7.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-01-01 至 1997-06-30

项目摘要

项目成果

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中文摘要
翻译
9661246 Leaskey这个小型企业创新研究第一阶段项目涉及处理半导体应用的硅晶片,以消除或减少不良金属离子的污染。杂质的一个主要来源已被确定为高温加工中使用的晶片载体。虽然有高纯度表面的载体可用,但随着使用,表面纯度水平显著降低,因为:(1)较高纯度的CVD涂层剥落和暴露在较低纯度的块材和/或(2)随时间和温度向表面扩散的污染物。在晶片加工温度高于~1100℃时,使用了碳化硅载流子。硅的存在增加了污染的可能性,这是由于许多金属离子通过硅的高扩散系数,通常比碳化硅的扩散系数大许多个数量级。希望用离子迁移率降低的组分来取代硅相。提出了一种创新的复合材料,它具有长期使用而不受污染的潜力,并改善了力学性能。将对这些组件进行全面的相关性能分析,包括纯度和机械性能。高质量部件的制造演示将导致对原型部件进行更广泛的分析,以确定长期性能。其主要应用将是半导体加工中的扩散元件。这种复合材料还可以制造出纯度较低的材料,用于发动机和热交换器部件等需要高温、耐腐蚀材料的应用。
英文摘要
9661246 Leaskey This Small Business Innovation Research Phase I project involves the processing of Si wafers for semiconductor applications to eliminate or reduce contamination by undesirable metal ions. A major source of impurities has been identified as the wafer carriers used in the high temperature processing. Although carriers with high purity surfaces are available, with use the surface purity levels significantly decrease because: (1) higher purity CVD coatings spall and exposure lower purity bulk material and/or (2) contaminants in the bulk diffuse with time and temperature to the surface. At wafer processing temperatures above ~1100 C, SiC-Si carriers are used. The presence of Si increases the potential for contamination due to the high diffusion coefficients of many metal ions through Si, which are often many orders of magnitude greater than for SiC. It would be desirable to replace the Si phase with a component through which ion mobility is decreased. An innovative composite is proposed which has the potential for long-term use without contamination and improved mechanical properties. The components will be completely analyzed for relevant properties including purity and mechanical properties. Demonstration of fabrication of high quality components would lead to more extensive analyses of prototype components to determine long term performance. The main application would be as diffusion components to be used in semiconductor processing. The composites could also be fabricated with lower purity levels and used for applications requiring high temperature, corrosion resistant materials such as engine and heat exchanger components.
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SBIR Phase I: Lower Cost Carbon-Carbon Composites Densified by Microwave Heating
  • 批准号:
    0912668
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2009
  • 负责人:
    Lori Bracamonte
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SBIR Phase I: Microwave Processing of Carbon-Carbon Composites
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    0638291
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2007
  • 负责人:
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SBIR Phase I: Low Cost Silicon Carbide Self-Lubricating Ceramics
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    9760840
  • 项目类别:
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  • 资助金额:
    $10.0万
  • 财政年份:
    1998
  • 负责人:
    Lori Bracamonte
  • 依托单位:
SBIR Phase II: Diffusion Resistant, High Purity Wafer Carriers
  • 批准号:
    9801197
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.0万
  • 财政年份:
    1998
  • 负责人:
    Lori Bracamonte
  • 依托单位:
国内基金
海外基金
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