SBIR Phase I: Diffusion Resistant, High Purity Wafer Carriers

SBIR 第一阶段：抗扩散、高纯度晶圆载体

• 批准号: 9661246
• 负责人: Lori Bracamonte
• 金额: $ 7.5万
• 依托单位: MATERIALS FOCUS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 1997-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9661246&HistoricalAwards=false
• 关键词: SBIR; Phase; Diffusion; Resistant; Purity

9661246 Leaskey This Small Business Innovation Research Phase I project involves the processing of Si wafers for semiconductor applications to eliminate or reduce contamination by undesirable metal ions. A major source of impurities has been identified as the wafer carriers used in the high temperature processing. Although carriers with high purity surfaces are available, with use the surface purity levels significantly decrease because: (1) higher purity CVD coatings spall and exposure lower purity bulk material and/or (2) contaminants in the bulk diffuse with time and temperature to the surface. At wafer processing temperatures above ~1100 C, SiC-Si carriers are used. The presence of Si increases the potential for contamination due to the high diffusion coefficients of many metal ions through Si, which are often many orders of magnitude greater than for SiC. It would be desirable to replace the Si phase with a component through which ion mobility is decreased. An innovative composite is proposed which has the potential for long-term use without contamination and improved mechanical properties. The components will be completely analyzed for relevant properties including purity and mechanical properties. Demonstration of fabrication of high quality components would lead to more extensive analyses of prototype components to determine long term performance. The main application would be as diffusion components to be used in semiconductor processing. The composites could also be fabricated with lower purity levels and used for applications requiring high temperature, corrosion resistant materials such as engine and heat exchanger components.

小行星9661246 这个小型企业创新研究第一阶段项目涉及半导体应用的硅晶片处理，以消除或减少不需要的金属离子的污染。 杂质的主要来源已被确定为在高温处理中使用的晶片载体。虽然具有高纯度表面的载体是可用的，但是随着使用，表面纯度水平显著降低，因为：（1）较高纯度的CVD涂层剥落并暴露较低纯度的本体材料和/或（2）本体中的污染物随着时间和温度扩散到表面。 在高于~1100 ℃的晶片处理温度下，使用SiC-Si载体。 由于许多金属离子通过Si的高扩散系数，Si的存在增加了污染的可能性，其通常比SiC大许多数量级。 期望用通过其降低离子迁移率的组分代替Si相。 提出了一种创新的复合材料，它具有长期使用而不受污染和改善机械性能的潜力。将对组件的相关性能（包括纯度和机械性能）进行全面分析。高质量部件的制造证明将导致对原型部件进行更广泛的分析，以确定长期性能。 主要应用是作为扩散元件用于半导体加工。 该复合材料还可以以较低的纯度水平制造，并用于需要高温，耐腐蚀材料的应用，如发动机和热交换器部件。