In-Situ Synchrotron Radiation Studies of GaN Growth

这个由加州大学圣巴巴拉分校和美国阿贡国家实验室的研究人员合作的项目，解决了金属有机化学气相沉积（MOCVD）生长GaN的基础研究问题，MOCVD生长过程的原位原子尺度表征，其科学目标是了解MOCVD晶体生长的基本化学和物理过程以及基本机制。该方法利用实时同步加速器x射线技术来测量最先进的MOCVD反应器内的结构、化学和表面形态演变。该项目强调生长、结构表征、物理性质测量和相关设备研究工作之间的紧密联系。该项目涉及材料科学主题领域的前沿研究问题，具有高技术相关性，在蓝绿色光谱区域具有紧凑和高效的光源。总的来说，这项研究将为电子/光子器件和集成电路的重要方面提供基础材料科学知识。此外，从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而有助于提高先进器件和电路的性能。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。* * *

9704201 Speck This collaborative project between researchers at the University of California, Santa Barbara and the Argonne National Laboratory, addresses fundamental research issues in the growth of GaN by metallo-organic chemical vapor deposition(MOCVD), in-situ atomic-scale characterization of the MOCVD growth process, with the scientific goal to understand the basic chemical and physical processes and the fundamental mechanism of crystal growth by MOCVD. The approach utilizes real-time synchrotron x-ray techniques to measure structure, chemistry, and surface morphology evolution within a state-of-the-art MOCVD reactor. The project emphasizes strong interlinking between growth, structural characterization, physical property measurements, and related device research efforts. %%% The project addresses forefront research issues in a topical area of materials science having high technological relevance, compact and efficient light sources in the blue-green spectral region. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***