In-Situ Synchrotron Radiation Studies of GaN Growth

9704201 SPECK这个由加州大学圣巴巴拉分校和阿贡国家实验室的研究人员合作的项目，致力于金属有机化学气相沉积(MOCVD)生长GaN的基础研究问题，MOCVD生长过程的原位原子尺度表征，旨在了解MOCVD生长晶体的基本化学和物理过程以及基本机制。该方法利用实时同步辐射X射线技术来测量最先进的MOCVD反应器内的结构、化学和表面形态的演变。该项目强调生长、结构表征、物理性能测量和相关器件研究工作之间的紧密联系。该项目解决了材料科学的一个热门领域的前沿研究问题，该领域具有高度的技术相关性，在蓝绿光谱区域使用紧凑和高效的光源。这项研究将在基础水平上为电子/光子器件和集成电路的重要方面贡献基本的材料科学知识。此外，从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而有助于提高先进器件和电路的性能。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

9704201 Speck This collaborative project between researchers at the University of California, Santa Barbara and the Argonne National Laboratory, addresses fundamental research issues in the growth of GaN by metallo-organic chemical vapor deposition(MOCVD), in-situ atomic-scale characterization of the MOCVD growth process, with the scientific goal to understand the basic chemical and physical processes and the fundamental mechanism of crystal growth by MOCVD. The approach utilizes real-time synchrotron x-ray techniques to measure structure, chemistry, and surface morphology evolution within a state-of-the-art MOCVD reactor. The project emphasizes strong interlinking between growth, structural characterization, physical property measurements, and related device research efforts. %%% The project addresses forefront research issues in a topical area of materials science having high technological relevance, compact and efficient light sources in the blue-green spectral region. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***