In-Situ Synchrotron Radiation Studies of GaN Growth

GaN 生长的原位同步辐射研究

• 批准号: 9704201
• 负责人: James Speck
• 金额: $ 24万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-04-01 至 2000-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9704201&HistoricalAwards=false
• 关键词: Situ; Synchrotron; Radiation; Studies; GaN

9704201 Speck This collaborative project between researchers at the University of California, Santa Barbara and the Argonne National Laboratory, addresses fundamental research issues in the growth of GaN by metallo-organic chemical vapor deposition(MOCVD), in-situ atomic-scale characterization of the MOCVD growth process, with the scientific goal to understand the basic chemical and physical processes and the fundamental mechanism of crystal growth by MOCVD. The approach utilizes real-time synchrotron x-ray techniques to measure structure, chemistry, and surface morphology evolution within a state-of-the-art MOCVD reactor. The project emphasizes strong interlinking between growth, structural characterization, physical property measurements, and related device research efforts. %%% The project addresses forefront research issues in a topical area of materials science having high technological relevance, compact and efficient light sources in the blue-green spectral region. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9704201 Speck加州大学圣巴巴拉分校和阿贡国家实验室的研究人员之间的这一合作项目解决了通过金属有机化学气相沉积（MOCVD）生长GaN的基础研究问题，MOCVD生长过程的原位原子尺度表征，其科学目标是了解MOCVD晶体生长的基本化学和物理过程以及基本机制。 该方法利用实时同步加速器X射线技术来测量结构，化学和表面形态的演变在一个国家的最先进的MOCVD反应器。 该项目强调增长，结构表征，物理性能测量和相关设备研究工作之间的紧密联系。 该项目解决了材料科学领域的前沿研究问题，在蓝绿色光谱区域具有高技术相关性，紧凑和高效的光源。 该研究将在基本层面上为电子/光子器件和集成电路的重要方面提供基本的材料科学知识。 此外，从研究中获得的基础知识和理解有望通过提供设计和生产改进材料和材料组合的基本理解和基础，有助于提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***