In-situ system observation of thermal stress in thin films by in-lab X-ray equipment and synchrotron radiation

本研究的第一个目的是探讨利用日本同步辐射研究所的实验室X射线装置和超高亮度同步辐射装置测量薄膜应力时，薄膜厚度的限制。100 nm的Cu膜和800 nm的TiN膜是实验室设备的最小厚度，而10 nm的Cu膜和100 nm以下的TiN膜的残余应力可以通过超亮同步辐射测量。第二个目的是研究薄Cu膜在热循环过程中的热应力行为。使用的样品是厚膜和薄膜，有和没有AlN钝化膜。在3000 nm厚的膜的情况下，没有钝化的膜的塑性变形的行为是清楚的，而在加热和冷却阶段期间，在钝化的膜中观察到明显的滞后回线。在100和80 nm厚的薄膜与AlN钝化的情况下，在加热和冷却循环期间观察到没有滞后的线性行为。

Residual stresses in Cu, TiN and TiAlN films were investigated by the usual in-lab X-ray equipment and ultra high X-rays of synchrotron radiation, at Japan synchrotron Radiation Research Institute.The first object of this research was to investigate the limit of the film thickness available to measure stresses in thin films by the in-lab X-ray equipment and the ultra-bright synchrotron radiation system. 100 nm of Cu film and 800 nm of TiN films were the minimum thickness for the in-lab equipment, whereas residual stresses in 10 nm of Cu and below 100 nm of TiN films could be measured by ultra-bright synchrotron radiations.The second object was to investigate thermal stress behavior of thin Cu films during thermal cycles. Specimens used were thick and thin films with and without AlN passivation film. In the case of 3000 nm thick film, the behavior of plastic deformation was clear for the film without passivation whereas a clear hysteresis loop was observed in the film with passivation during heating and cooling stages. In the case of thin films of 100 and 80 nm thick films with AlN passivation, a linear behavior without hysteresis was observed during heating and cooling cycles.