In-situ system observation of thermal stress in thin films by in-lab X-ray equipment and synchrotron radiation
In-situ system observation of thermal stress in thin films by in-lab X-ray equipment and synchrotron radiation
批准号:
14550081
负责人:
HANABUSA Takao
金额:
$1.98万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003
中文摘要
本研究利用日本同步辐射研究所常用的实验室X射线设备和超高功率的同步辐射X射线,研究了Cu、TiN和TiAlN薄膜中的残余应力。本研究的第一个目的是研究实验室X射线设备和超亮同步辐射系统测量薄膜应力的薄膜厚度极限。实验装置的最小厚度为100 nm的铜薄膜和800 nm的TiN薄膜,而10 nm的铜薄膜和100 nm以下的TiN薄膜的残余应力可以用超亮同步辐射测量。第二个目标是研究铜薄膜在热循环过程中的热应力行为。所用样品为厚膜和薄膜,有无氮化铝钝化膜。在3000 nm厚的薄膜中,未钝化的薄膜在加热和冷却阶段有明显的塑性变形行为,而钝化的薄膜在加热和冷却阶段有明显的滞后环。在100 nm和80 nm厚的AlN钝化薄膜的情况下,在加热和冷却循环中观察到没有滞后的线性行为。
英文摘要
Residual stresses in Cu, TiN and TiAlN films were investigated by the usual in-lab X-ray equipment and ultra high X-rays of synchrotron radiation, at Japan synchrotron Radiation Research Institute.The first object of this research was to investigate the limit of the film thickness available to measure stresses in thin films by the in-lab X-ray equipment and the ultra-bright synchrotron radiation system. 100 nm of Cu film and 800 nm of TiN films were the minimum thickness for the in-lab equipment, whereas residual stresses in 10 nm of Cu and below 100 nm of TiN films could be measured by ultra-bright synchrotron radiations.The second object was to investigate thermal stress behavior of thin Cu films during thermal cycles. Specimens used were thick and thin films with and without AlN passivation film. In the case of 3000 nm thick film, the behavior of plastic deformation was clear for the film without passivation whereas a clear hysteresis loop was observed in the film with passivation during heating and cooling stages. In the case of thin films of 100 and 80 nm thick films with AlN passivation, a linear behavior without hysteresis was observed during heating and cooling cycles.
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Takao Hanabusa: "Crystal orientation and residual stress in TiN film by synchrotron radiation"Z.fur Metallkd.. 94. 662-666 (2003)
Takao Hanabusa:“同步加速器辐射下 TiN 膜中的晶体取向和残余应力”Z.fur Metallkd.. 94. 662-666 (2003)
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通讯作者:
Takao Hanabusa, et al.: "Crystal orientation and residual stress in TiN film by synchrotron radiation"Zeitschrift flier Metallkunde. 94-6. 662-666 (2003)
Takao Hanabusa 等人:“同步加速器辐射下 TiN 薄膜中的晶体取向和残余应力”Zeitschrift flier Metallkunde。
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Takao Hanabusa: "Evaluation of internal stresses in single-, double-and multi-layered TiN and TiAlN thin films by synchrotron radiation"JSME International Journal. (submitted).
Takao Hanabusa:“通过同步辐射评估单层、双层和多层 TiN 和 TiAlN 薄膜的内应力”JSME 国际期刊。
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通讯作者:
Takao Hanabusa: "Residual stress and thermal stress observation in thin copper films"Thin solid films. (in press).
Takao Hanabusa:“铜薄膜中的残余应力和热应力观察”固体薄膜。
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通讯作者:
Takao Hanabusa, et al.: "Evaluation of internal stresses in single-, double-and multi-layered TIN and TiAlN thin films by synchrotron radiation"ATEM'03, JSME-MMD. (Submitted to JSME InternationalJournal). (2003)
Takao Hanabusa 等人:“通过同步辐射评估单层、双层和多层 TIN 和 TiAlN 薄膜的内应力”ATEM03,JSME-MMD。
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共 6 条
Deformation constraint by grain boundary observed with microscopic view point
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.0万
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财政年份:2009
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负责人:HANABUSA Takao
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依托单位:
What is a controlling factor of the strength of thin films?
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批准号:17560071
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资助金额:$2.24万
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财政年份:2005
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负责人:HANABUSA Takao
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Internal Stress and Atomic Transportation in Thin Film and Line Structure
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批准号:10650092
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:1998
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负责人:HANABUSA Takao
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依托单位:
X-ray Study on Thermal-Shock-Fatigue Property of Functionally Gradient Materials
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批准号:06650763
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.15万
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财政年份:1994
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负责人:HANABUSA Takao
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依托单位:
Study on Mechanical and Thermal Properties and Stresses of Functionally Gradient Materials Produced by Laser Splaying
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批准号:03650064
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1991
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负责人:HANABUSA Takao
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依托单位:
海外基金