Materials World Network: Growth and Characterization of Bulk Crystals and Epitaxial Films of Beta-Ga203, SnO2, In203 and ZnO

材料世界网络：Beta-Ga2O3、SnO2、In2O3 和 ZnO 块状晶体和外延膜的生长和表征

• 批准号: 0909203
• 负责人: James Speck
• 金额: $ 33万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-01 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0909203&HistoricalAwards=false
• 关键词: Materials; World; Network; Growth; Characterization

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Materials World Network project is supported by DMR-CER and DMR-OSP.This Materials World Network research program between Prof. Roberto Fornari from the Leibniz Institute for Crystal Growth (IKZ), Berlin, Germany; Prof. Recardo Manzke from the Humboldt University (HU), Berlin, Germany; and Prof. James S. Speck from the University of California, Santa Barbara (UCSB) focuses on the growth of the highest quality single crystal oxides that enable high performance oxide thin films. The oxides are typically used for display and solar cell applications. The insight gained in this program is creating new pathways to higher performance light emitting diodes, displays and solar cells. Additionally, the students in this program are engaged in experimental and theoretical activities in the U.S. and Germany and thus will be exposed to a broad of scientific issues in an international setting.The exploration of oxides from the perspective of semiconductor science and technology offers exciting opportunities for uncovering new physics as well as developing novel devices with unprecedented performance and functionality. There is currently great interest in the exploration and development of semiconducting binary oxides (beta-Ga2O3, In2O3, SnO2, ZnO) as new wide-band-gap electronic materials. When grown as high purity epitaxial films with controlled doping, as carried out for non-oxide semiconductors (e.g., Si, GaAs), they have great potential as a new class of semiconductors (NSF-partner UCSB). In this context, this project addresses a major bottleneck, namely the availability of bulk substrates for homoepitaxy (partners IKZ and HU Berlin). High quality homoepitaxial growth on single crystal substrates provided by our partners IKZ and HU facilitate solutions to outstanding scientific questions for semiconducting oxides including: the origin of unintentional n-type doping; the presence of surface electron accumulation layers; and the development of p-type doping and p-n homojunctions. A strong impact on technology is anticipated: the wide-band-gap oxides that are the focus of the investigation are prime candidates for transparent electronics, high-frequency devices, multifunctional devices, and potentially for light emitters.

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。 材料世界网络项目由德国柏林莱布尼茨晶体生长研究所（IKZ）的Roberto Fornari教授、德国德国柏林洪堡大学（HU）的Recardo Manzke教授和德国科学院的James S.来自加州大学圣巴巴拉分校（UCSB）的Speck专注于最高质量单晶氧化物的生长，从而实现高性能氧化物薄膜。 氧化物通常用于显示器和太阳能电池应用。该项目的深入研究为生产更高性能的发光二极管、显示器和太阳能电池开辟了新的途径。 此外，该专业的学生在美国和德国从事实验和理论活动，因此将在国际环境中接触到广泛的科学问题。从半导体科学和技术的角度探索氧化物为发现新物理以及开发具有前所未有的性能和功能的新型器件提供了令人兴奋的机会。半导体二元氧化物（β-Ga_2 O_3、In_2 O_3、SnO_2、ZnO）作为新型宽带隙电子材料的研究和开发是当前的热点。当生长为具有受控掺杂的高纯度外延膜时，如对非氧化物半导体（例如，Si，GaAs），它们作为一类新的半导体具有巨大的潜力（NSF合作伙伴UCSB）。在这种情况下，该项目解决了一个主要瓶颈，即同质外延大块衬底的可用性（合作伙伴IKZ和HU柏林）。由我们的合作伙伴IKZ和HU提供的单晶衬底上的高质量同质外延生长有助于解决半导体氧化物的突出科学问题，包括：无意n型掺杂的起源;表面电子积累层的存在;以及p型掺杂和p-n同质结的发展。 预计将对技术产生重大影响：作为研究重点的宽带隙氧化物是透明电子器件、高频器件、多功能器件以及潜在发光体的主要候选材料。