Fundamental and Technological Basis of Compliant Universal Substrates for Growing Defect Free Heteroepitaxial Films

生长无缺陷异质外延薄膜的通用通用基材的基础和技术基础

• 批准号: 9711208
• 负责人: yuhwa lo
• 金额: $ 33万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-09-01 至 2001-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9711208&HistoricalAwards=false
• 关键词: Fundamental; Technological; Basis; Compliant; Universal

The objectives of the proposed research and education program are: (1) to develop a viable technology for compliant substrates which can be used to grow defect-free heteroepitaxial materials of large (15%) lattice mismatches and different lattice structures, and (2) to understand the underlining physics of compliant substrates and to establish a physical model to quantitatively describe the phenomenon of substrate compliance. In brief, this program aims to establish the theory and technology of compliant universal substrates. As a result of this research, one or two types of substrates, perhaps GaAs or Si, will be sufficient to accommodate a large variety of compound semiconductor epitaxial materials, including those having no proper conventional substrates on which to grow. The proposed compliant universal substrate is essentially made of an ultra thin (10 A to 100A) single crystal (e.g. GaAs or Si) bonded to a GaAs or Si bulk crystal with a large ( 10 degrees) twist angle. It is believed that the microstructure of the twist boundary and the extremely thin bonded layer play a critical role in making the structure compliant to the heteroepitaxial overlayer. We conceive that the twist bonded thin portion of the bicrystal behaves somewhat similar to a free standing thin template to achieve its compliance. Our preliminary experimental results show that InGaP, GaSb, and InSb, with 1%, 8%, and 15% mismatch to GaAs, respectively, can be grown defect-free on the compliant universal substrates. This proposal brings together the expertise of Lo, who has developed the concept of the compliant universal substrate, and of Sass, who has carried out extensive studies of the structure of grain boundaries contained in bicrystals with the same geometry as in the compliant universal substrate. The research team made of Lo, Sass, 3 Ph.D. students and at least 4 undergraduates will perform three tasks: fundamental materials research, compliant substrate technology development, and material and device demonstrations. Through these efforts, the physical mechanisms, technologies, and applications of compliant universal substrates are anticipated to be established. Compliant universal substrates have been a dream for many decades for people working on semiconductor materials and devices. The realization of compliant universal substrates will remove one of the most serious road blocks in semiconductor research and significantly advance the technologies of microelectronics, optoelectronics, and the integration of both. The proposed research will contribute substantially to achieving this goal.

拟议的研究和教育计划的目标是：（1）开发一种可行的技术，可用于生长无缺陷的异质外延材料的大（15%）的晶格失配和不同的晶格结构，和（2）了解顺应性衬底的底层物理，并建立一个物理模型，以定量描述衬底顺应性的现象。 简而言之，本计划旨在建立柔顺通用基板的理论和技术。 作为这项研究的结果，一种或两种类型的衬底，可能是GaAs或Si，将足以容纳各种各样的化合物半导体外延材料，包括那些没有合适的传统衬底生长的材料。 所提出的顺应性通用衬底基本上由超薄（10 A至100 A）单晶（例如GaAs或Si）制成，该超薄单晶以大（10度）扭转角接合到GaAs或Si块体晶体。 据信，扭曲边界和极薄的键合层的微观结构在使结构顺应异质外延覆盖层中起关键作用。 我们认为，双晶体的扭键合薄部分的行为有点类似于一个独立的薄模板，以实现其兼容性。 我们的初步实验结果表明，InGaP，GaSb和InSb，与GaAs的1%，8%和15%的失配，分别可以生长无缺陷的顺应性通用衬底上。 这个建议汇集了Lo和Sass的专业知识，Lo提出了柔顺通用基板的概念，Sass对具有与柔顺通用基板相同几何形状的双晶体中所含的晶界结构进行了广泛的研究。 研究团队由Lo，Sass，3博士组成。学生和至少4名本科生将完成三项任务：基础材料研究，顺应性衬底技术开发，以及材料和器件演示。 通过这些努力，顺应性通用基板的物理机制、技术和应用有望建立。 几十年来，对于从事半导体材料和器件工作的人们来说，柔性通用基板一直是一个梦想。 柔性通用衬底的实现将消除半导体研究中最严重的障碍之一，并显着推进微电子，光电子技术以及两者的集成。 拟议的研究将大大有助于实现这一目标。