Fundamental Research in Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon and Nanocystalline Silicon Films from SiH4/H2/Ar Discharges

SiH4/H2/Ar 放电等离子体增强化学气相沉积氢化非晶硅和纳米晶硅薄膜的基础研究

• 批准号: 9713280
• 负责人: Eray Aydil
• 金额: $ 49.5万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-10-01 至 2001-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9713280&HistoricalAwards=false
• 关键词: Fundamental; Research; Plasma; Enhanced; Chemical

9713280 Aydil This project combines an integrated theoretical and experimental approach to the systematic investigation of effects of plasma processing conditions on the structure and properties of a-Si:H and nc-Si:H films during PECVD from SiH4/H2/Ar glow discharges. The project aims at obtaining fundamental information regarding key internal plasma variables that determine film properties, such as crystallinity, crystal size, hydrogen content, and defect density. The goal is to elucidate how deposited film properties are affected by the identity and flux of chemically reactive molecular fragments and ions arriving at the film surface. Atomic-scale computer simulations will be employed to study the interaction of radicals and molecular fragments (e.g., SiH, SiH2, SiH3, H) from the plasma with the film surface. Molecular-dynamics, molecular-statics, lattice-dynamics, and Monte Carlo simulators based on recently developed interatomic potential-energy functions, will be used to study plasma-surface interactions. Also, hybrid off-lattice kinetic Monte Carlo simulations will be used for full-scale dynamical simulations of the deposition process over realistic time scales for a range of processing conditions. Results of computer simulations will be compared with experimental data and the insights gained from the simulations used to guide new experimental studies and design new deposition strategies. %%% This research activity cuts across traditional boundaries between different disciplines including physics, chemistry, engineering, and materials science to address forefront issues in a field with high technological relevance. The nature of the research also provides an effective mechanism for educating students and postdoctoral scholars in addressing technologically important research problems using an integrated experimental and theoretical approach. The research will contribute basic plasma and materials science knowledge at a fundamental level to several aspects of advanced electronic/photonic devices and integrated circuitry. ***

本项目采用理论和实验相结合的方法，系统研究了等离子体处理条件对SiH4/H2/Ar辉光放电PECVD过程中a-Si:H和c- si:H薄膜结构和性能的影响。该项目旨在获得关于决定薄膜性能的关键内部等离子体变量的基本信息，如结晶度、晶体尺寸、氢含量和缺陷密度。目的是阐明沉积膜的性质如何受到到达膜表面的化学反应分子碎片和离子的身份和通量的影响。原子尺度的计算机模拟将用于研究来自等离子体的自由基和分子碎片（例如SiH， SiH2, SiH3， H）与薄膜表面的相互作用。分子动力学，分子静力学，晶格动力学和蒙特卡罗模拟器基于最近开发的原子间势能函数，将用于研究等离子体表面相互作用。此外，混合非晶格动力学蒙特卡罗模拟将用于在实际时间尺度上对一系列加工条件下的沉积过程进行全尺寸动态模拟。计算机模拟的结果将与实验数据和从模拟中获得的见解进行比较，用于指导新的实验研究和设计新的沉积策略。这项研究活动跨越了不同学科之间的传统界限，包括物理、化学、工程和材料科学，以解决与高科技相关领域的前沿问题。%%% %研究的性质也提供了一个有效的机制，教育学生和博士后学者在解决技术上重要的研究问题，使用综合实验和理论的方法。这项研究将为先进的电子/光子器件和集成电路的几个方面提供基础的等离子体和材料科学知识。＊＊＊