GOALI/IUCP: Subsurface Damage in II-VI Semiconductors

这个大学-工业合作研究项目旨在了解在制造宽带隙半导体衬底的超精细加工过程中造成的亚表面损伤。这种理解将有助于确定在生产这些基板时可以克服亚表面损伤问题的加工条件。包括ZnSe、CdS和ZnO在内的II-VI半导体材料的衬底将通过超精密加工和抛光等多种表面加工方法制备。由此产生的亚表面晶格紊乱将评估使用离子束通道，阴极发光和扫描电容显微镜。在表面表征之后，将通过分子束外延在衬底上生长外延膜，并将用于进行性能测试。该项目将与Eagle-Picher研究实验室、洛斯阿拉莫斯国家实验室和国家标准与技术研究所合作进行。该项目可以对半导体衬底的超细精加工中的亚表面损伤有一个基本的了解，在led和激光器等产品的生产中具有重大的实际效益。该项目的一个主要优势是与工业和政府实验室建立了牢固的伙伴关系。

This university-industry collaboration research project seeks to understand the subsurface damage resulting from ultra-fine finishing processes in the manufacture of wide band-gap semiconductor substrates. This understanding will aid in identifying the processing conditions that can overcome subsurface damage problems in producing these substrates. Substrates of II-VI semiconductor materials including ZnSe, CdS and ZnO will be prepared by a variety of surface processing methods including ultra-precision machining and polishing. The resulting subsurface lattice disorder will be assessed with the use of ion beam channeling, cathodoluminescent, and scanning capacitance microscopy. Subsequent to surface characterization, epitaxial films will be grown on the substrates by molecular beam epitaxy, and will be used to do performance testing. The project will be conducted in collaboration with Eagle-Picher Research Laboratory, Los Alamos National Laboratory, and the National Institute of Standards and Technology. The project can lead to a fundamental understanding of subsurface damage in the ultra-fine finishing of semiconductor substrates, with significant practical benefits in the production of LEDs and lasers among others. A major strength of the project is the existence of strong partnerships with industry and government laboratories.