GOALI/IUCP: Subsurface Damage in II-VI Semiconductors

这项大学与行业合作的研究项目旨在了解在制造宽禁带半导体基板的过程中，超精细加工工艺造成的亚表面损害。这一理解将有助于确定在生产这些基材时可以克服亚表面损害问题的工艺条件。包括锌硒、硫化镉和氧化锌在内的II-VI半导体材料的衬底将通过各种表面处理方法制备，包括超精密加工和抛光。由此产生的亚表面晶格无序将使用离子束沟道、阴极发光和扫描电容显微镜进行评估。在表面表征之后，将通过分子束外延在衬底上生长外延膜，并将其用于性能测试。该项目将与Eagle-Picher研究实验室、洛斯阿拉莫斯国家实验室和国家标准与技术研究所合作进行。该项目可以使人们对半导体衬底超精细加工中的亚表面损伤有一个基本的了解，在生产LED和激光等方面具有重大的实际效益。该项目的一个主要优势是与行业和政府实验室建立了强有力的伙伴关系。

This university-industry collaboration research project seeks to understand the subsurface damage resulting from ultra-fine finishing processes in the manufacture of wide band-gap semiconductor substrates. This understanding will aid in identifying the processing conditions that can overcome subsurface damage problems in producing these substrates. Substrates of II-VI semiconductor materials including ZnSe, CdS and ZnO will be prepared by a variety of surface processing methods including ultra-precision machining and polishing. The resulting subsurface lattice disorder will be assessed with the use of ion beam channeling, cathodoluminescent, and scanning capacitance microscopy. Subsequent to surface characterization, epitaxial films will be grown on the substrates by molecular beam epitaxy, and will be used to do performance testing. The project will be conducted in collaboration with Eagle-Picher Research Laboratory, Los Alamos National Laboratory, and the National Institute of Standards and Technology. The project can lead to a fundamental understanding of subsurface damage in the ultra-fine finishing of semiconductor substrates, with significant practical benefits in the production of LEDs and lasers among others. A major strength of the project is the existence of strong partnerships with industry and government laboratories.