GOALI: Creation of Crystalline Surfaces for Short Wavelength Light Emitters

目标:为短波长发光体创建晶体表面

基本信息

  • 批准号:
    0100318
  • 负责人:
  • 金额:
    $ 30万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2001
  • 资助国家:
    美国
  • 起止时间:
    2001-04-01 至 2006-03-31
  • 项目状态:
    已结题

项目摘要

This university-industry collaborative research project seeks to advance the capability for the manufacture of crystalline surfaces for use in short wavelength light emitters (blue/UV LEDs and lasers) by contributing to a basic understanding of the generation of defects resultant from the processing of ZnO substrates, and the subsequent homoepitaxial growth of films. ZnO substrates will be prepared by chemomechanical polishing and further pre-growth processing techniques, after which homoepitaxial films will be grown on the substrates. The defects generated at various stages of surface processing will be examined with high energy backscattering spectrometry, ion channeling and scanning electrical properties microscopy. This understanding will aid in identifying the processing conditions which show promise for producing ultra-high quality epitaxial films on ZnO. Development of this understanding has the potential to contributing to the successful demonstration of the homoepitaxial growth of ZnO. This work will further contribute to the development of advanced surface characterization tools which are needed for assessing near surface damage at the nanometer scale. An extensive collaborative effort involving Oklahoma State University, Eagle-Picher Technologies and Los Alamos National Laboratory will be undertaken.
这一大学与行业合作的研究项目致力于提高用于短波长光发射器(蓝光/紫外光LED和激光器)的晶体表面的制造能力,从而有助于基本了解氧化锌衬底加工产生的缺陷的产生,以及随后薄膜的同质外延生长。将通过化学机械抛光和进一步的预生长处理技术来制备氧化锌衬底,然后在衬底上生长同质外延薄膜。在表面处理的不同阶段产生的缺陷将用高能背散射光谱、离子沟道和扫描电性能显微镜进行检查。这一理解将有助于确定在氧化锌上生产超高质量外延薄膜的工艺条件。这一认识的发展有可能有助于成功地演示氧化锌的同质外延生长。这项工作将进一步促进先进的表面表征工具的开发,这些工具是在纳米尺度上评估近表面损伤所需的。俄克拉荷马州立大学、Eagle-Picher Technologies和洛斯阿拉莫斯国家实验室将进行广泛的合作努力。

项目成果

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Don Lucca其他文献

Don Lucca的其他文献

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{{ truncateString('Don Lucca', 18)}}的其他基金

Collaborative Research: Manufacturing of Complex Optical Elements for Advanced Imaging Systems
合作研究:先进成像系统复杂光学元件的制造
  • 批准号:
    2210365
  • 财政年份:
    2022
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Fundamental Study of Ultra-Precision Machining and Near Surface Damage Evolution in Single Crystal Fluorides for Advanced Optics
先进光学用单晶氟化物超精密加工和近表面损伤演化的基础研究
  • 批准号:
    1727244
  • 财政年份:
    2017
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Collaborative Research: Manufacturing of Complex Lenses for Thermal Imaging, Night Vision and Surveillance Systems
合作研究:制造用于热成像、夜视和监控系统的复杂镜头
  • 批准号:
    1437232
  • 财政年份:
    2014
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
NUE: Nanotechnology Education for Roll-to-Roll Manufacturing
NUE:卷对卷制造纳米技术教育
  • 批准号:
    1446097
  • 财政年份:
    2014
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Collaborative Research: Ion Irradiation-Induced Nanocrystallization of Metallic Glasses and Its Effects on Their Mechanical Properties
合作研究:离子辐照诱导金属玻璃纳米晶化及其对其机械性能的影响
  • 批准号:
    1130606
  • 财政年份:
    2011
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Sensors: Synthesis of Active Quantum Dot Infra-Red (IR) Sensors
传感器:活性量子点红外 (IR) 传感器的合成
  • 批准号:
    0529085
  • 财政年份:
    2005
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
Collaborative Research: Atomic Plane Electrical Contacts
合作研究:原子平面电接触
  • 批准号:
    0521989
  • 财政年份:
    2005
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
US-Germany Cooperative Research: High Resolution Surface Zone Analysis in the Transregional Center on Process Chains for the Replication of Complex Optical Components
美德合作研究:复杂光学元件复制工艺链跨区域中心的高分辨率表面区域分析
  • 批准号:
    0352377
  • 财政年份:
    2004
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
U.S.- Germany Cooperative Research: Process Chains for the Replication of Complex Optical Components: High Resolution Surface Zone Analysis
美德合作研究:复杂光学元件复制的工艺链:高分辨率表面区域分析
  • 批准号:
    0128050
  • 财政年份:
    2001
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant
GOALI/IUCP: Subsurface Damage in II-VI Semiconductors
GOALI/IUCP:II-VI 半导体中的次表面损伤
  • 批准号:
    9713747
  • 财政年份:
    1997
  • 资助金额:
    $ 30万
  • 项目类别:
    Standard Grant

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