ERA NanoSci - Optical interface for gate-controlled quantum dots

ERA NanoSci - 用于门控量子点的光学接口

• 批准号: 119665874
• 负责人: Dr. Elisabeth Reiger
• 金额: --
• 依托单位: KTH Kungliga Tekniska högskolan
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2009
• 资助国家: 德国
• 起止时间: 2008-12-31 至 2013-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/119665874?language=en
• 关键词: ERA; NanoSci; Optical; interface; gate

Quantum information can take different forms, among which photon polarization is most useful for long distance communication while single electron spin is most useful for qubits interactions. However, no quantum interface between a single-electron spin and a single-photon polarization has yet been demonstrated. In this project we suggest to interface optically active quantum dots generating single photons with gate-controlled quantum dots controlling single electron spins. In our scheme, the electron spin quantum dots are controlled by electrical gates and the coupling between the two types of quantum dots will also be controlled by nanometer scale gates. Our ultimate aim is to coherently interface two quantum dots with different functionalities: an optically active quantum dot with a gatedefined quantum dot via a dynamic control of the local potential to convert single electrons into single photons.

量子信息可以采取不同的形式，其中光子极化最适用于长距离通信，而单电子自旋最适用于量子比特相互作用。然而，单电子自旋和单光子极化之间的量子界面尚未得到证实。在这个项目中，我们建议接口光学活性量子点产生单光子与门控量子点控制单电子自旋。在我们的方案中，电子自旋量子点由电子门控制，两种量子点之间的耦合也将由纳米级的门控制。我们的最终目标是相干接口两个量子点具有不同的功能：一个光学活性量子点与gatedefined量子点通过动态控制的本地电位转换成单电子单光子。

项目成果

Transition from Au to pseudo-Ga catalyzed growth mode observed in GaAs nanowires grown by molecular beam epitaxy

• DOI: 10.1103/physrevb.85.245450
• 发表时间: 2012-06
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: M. Soda;A. Rudolph;D. Schuh;J. Zweck;D. Bougeard;E. Reiger