SBIR Phase I: Nanoscale Giant Magnetoresistive Films

SBIR 第一阶段：纳米级巨磁阻薄膜

• 批准号: 9760258
• 负责人: Richard Spitzer
• 金额: $ 8.5万
• 依托单位: INTEGRATED MAGNETOELECTRONICS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-01-01 至 1998-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9760258&HistoricalAwards=false
• 关键词: SBIR; Phase; Nanoscale; Giant; Magnetoresistive

*** 9760258 Spitzer This Small Business Innovation Research Phase I project will investigate properties of giant magnetoresistance,(GMR) at nanoscale feature sizes. Miniaturization of GMR films is expected to lead to improved characteristics, such as faster switching times. A number of investigators have found GMR values to increase with miniaturiztion, but with an attendant increase in their coercivity, i.e., the required switching field. The proposer has developed GMR films with ultralow coercivities, an order of magnitude lower than previously attained. Because of their structure, these films are expected to exhibit the increase in GMR values reported by others upon miniaturization, while maintaining low coercivity. A variety of GMR films with different design parameters will be fabricated and tested at 100 nm feature size. These films wil be used to design integrated solid -state devices that use no semiconductors, such as e GMR-based electronic components. The characteristics of these devices will be stimulated. Their performance-is expected to show improvement with miniaturization. OMR films form the foundation for various integrated devices without semiconductors. The potential applications of such devices include nonvolatile memory and storage, as well as general-purpose all-metal electronics, with billion-dollar markets. ***

*9760258斯皮策这个小型企业创新研究第一阶段项目将研究纳米级特征尺寸的巨磁电阻(GMR)的特性。GMR薄膜的小型化有望带来更好的特性，例如更快的开关时间。许多研究人员发现，GMR值随着小型化而增加，但随之而来的是其矫顽力的增加，即所需的切换场。该提出者已经开发出具有超低矫直力的GMR薄膜，比以前获得的低一个数量级。由于它们的结构，这些薄膜有望在小型化后表现出其他人所报道的GMR值的增加，同时保持低的矫顽力。将制备各种不同设计参数的GMR薄膜，并在100 nm特征尺寸下进行测试。这些薄膜将用于设计不使用半导体的集成固态设备，例如基于e GMR的电子元件。这些设备的特性将被激发。他们的性能--预计将随着小型化而有所改善。OMR薄膜构成了各种不含半导体的集成器件的基础。这类设备的潜在应用包括非易失性存储器和存储设备，以及具有数十亿美元市场的通用全金属电子产品。***