SBIR Phase I: High Throughput Nanoscale Patterning with an Array of Carbon Nanotube Cold Field Emission Guns for Electron Beam Lithography

SBIR 第一阶段：使用用于电子束光刻的碳纳米管冷场发射枪阵列进行高通量纳米级图案化

• 批准号: 0945253
• 负责人: Cattien Nguyen
• 金额: $ 14.9万
• 依托单位: 4WIND SCIENCE AND ENGINEERING, LLC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0945253&HistoricalAwards=false
• 关键词: SBIR; Phase; Throughput; Nanoscale; Patterning

This Small Business Innovation Research Phase I project will prove the technicaland commercial feasibility of a parallel electron beam (e-beam) lithography system utilizing an array of individually addressable carbon nanotube (CNT) cold field emitters. In Phase I, a 3×3 array of individually addressable CNT electron guns will be built and a suitable array of microcolumns will be explored. A higher throughput e-beam lithography system based on an array of electron sources will be built and characterized and is anticipated to achieve better than 10 nm patterning capability.This novel nanoelectromechanical system (NEMS) technology will enable a low cost nanoscale lithography system for general laboratory usage, thus significantly increasing the accessibility of nanoscale patterning. The work will be conducted in an Industry, University, Government collaboration and thus facilitate the transfer of knowledge amongst these entities.

这个小企业创新研究第一阶段项目将证明利用可单独寻址的碳纳米管（CNT）冷场发射器阵列的平行电子束（e束）光刻系统的技术和商业可行性。在第一阶段，将建立一个3×3可单独寻址的CNT电子枪阵列，并探索合适的微柱阵列。一个更高的吞吐量的电子束光刻系统的基础上的电子源阵列将建立和表征，预计将实现优于10 nm的图案化capability.This新的纳机电系统（NEMS）技术将使低成本的纳米级光刻系统的一般实验室使用，从而显着提高纳米级图案的可及性。这项工作将在工业，大学和政府的合作下进行，从而促进这些实体之间的知识转移。